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UV LED multiple quantum well structure device capable of regulating and controlling energy band and growing method

A multi-quantum well structure, quantum well technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of low radiation recombination efficiency, and achieve the effect of improving power and efficiency, and improving internal quantum efficiency.

Inactive Publication Date: 2013-09-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0003] The problem to be solved by the present invention is the problem of low radiation recombination efficiency in the multi-quantum wells in the active region of AlGaN-based light-emitting diodes

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  • UV LED multiple quantum well structure device capable of regulating and controlling energy band and growing method
  • UV LED multiple quantum well structure device capable of regulating and controlling energy band and growing method
  • UV LED multiple quantum well structure device capable of regulating and controlling energy band and growing method

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Embodiment Construction

[0014] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0015] figure 1 It is a schematic diagram of a multi-quantum well structure of a UV LED with an adjustable energy band disclosed by a preferred embodiment of the present invention. like figure 1 As shown, the epitaxial growth direction is from bottom to top. Wherein the crystal plane corresponding to the epitaxial growth direction of the multi-quantum well structure is a polar plane and a semi-polar plane, preferably a (0001) crystal plane, and its base material is Al x Ga 1-x N, where 0≤x≤1. Along the epitaxial growth direction, the multiple quantum well structure includes:

[0016] The energy band regulating quantum well structure 13 is formed by alternately and repeatedly growing the quantum well barrier layer 11 ...

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Abstract

The invention discloses a UV LED multiple quantum well structure device capable of regulating and controlling an energy band and a growing method. The device can improve radiative recombination efficiency in a UV LED active area multiple quantum well. The UV LED multiple quantum well structure device capable of regulating and controlling the energy band comprises at least one quantum well structure with the energy band which is regulated and controlled. The quantum well structure with the energy band which is regulated and controlled is formed by a quantum well barrier layer and a component gradient quantum well potential well layer in an alternative growing mode. The UV LED multiple quantum well structure device capable of regulating and controlling the energy band can achieve energy band regulation and control in a quantum well area, improves superposition of electron hole wave functions in a quantum well quantum well, improves the radiative recombination efficiency in the UV LED quantum well area, and thus improves power and efficiency of UV-LEDs.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a quantum well structure of a UV LED with adjustable energy band and a growth method thereof. The invention can effectively improve the internal quantum efficiency of ultraviolet and deep ultraviolet light-emitting diodes, and further improve the radiation efficiency and power of LEDs, and can be used in ultraviolet and deep ultraviolet LEDs. Background technique [0002] Gallium nitride-based LEDs have developed rapidly in recent years, but the application of short-wavelength AlGaN-based UV LEDs is limited by their low efficiency. The reasons come from many aspects, including high difficulty in epitaxy of AlGaN materials with high Al group; high difficulty in doping, especially involving p-type doping; difficulty in finding metals with matching work functions to form good ohmic contacts, etc. Another important reason is that the electronegativity of the metal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00
Inventor 张连曾建平魏同波闫建昌王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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