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Arc ion plating method combined with multi-stage magnetic field straight tube magnetic filtering and pulse bias

A technology of arc ion plating and arc plasma, which is applied in the field of material surface treatment, can solve problems such as large particles, and achieve the effects of increased target area, uniform target ablation, and high ionization rate

Active Publication Date: 2015-08-19
ZHENGZHOU UNIVERSITY OF AERONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The purpose of the present invention is to solve the problem of eliminating the large particles in the film by using the low melting point target material as the metal plasma source combined with the method of applying pulse bias voltage on the workpiece, and eliminating the excessive substrate temperature caused by the traditional mode arc ion plating technology. High and easy to produce large particles, a multi-stage magnetic field straight tube magnetic filter and pulse bias combined arc ion plating method was proposed

Method used

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  • Arc ion plating method combined with multi-stage magnetic field straight tube magnetic filtering and pulse bias
  • Arc ion plating method combined with multi-stage magnetic field straight tube magnetic filtering and pulse bias

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specific Embodiment approach 1

[0023] Specific implementation mode one: the following combination figure 1 and figure 2 Describe this embodiment, the device used in the arc ion plating method of multi-stage magnetic field straight tube magnetic filtering and pulse bias combination in this embodiment includes pulse bias power supply 1, multi-stage magnetic field straight tube magnetic filtering device 2, arc plasma power supply 3. Arc plasma target source 4, vacuum chamber 5 and sample stage 6, the method comprises the following steps:

[0024] Step 1. Place the workpiece to be processed on the sample stage 6 in the vacuum chamber 5, connect the workpiece to the pulse bias output end of the pulse bias power supply 1, and connect the arc plasma target source 4 installed on the vacuum chamber 5 to the arc plasma the output terminal of the power supply 3;

[0025] Step 2, film deposition: vacuumize the vacuum chamber 5 until the vacuum degree in the vacuum chamber 5 is less than 10 -2 When Pa, pass the work...

specific Embodiment approach 2

[0033] Embodiment 2: The difference between this embodiment and Embodiment 1 is that a plurality of arc plasma power sources 3 are used to output the plasma of the low-melting point target material, combined with a multi-stage magnetic field straight tube magnetic filter device to perform multi-element multi-layer thin film deposition Step 1 to Step 2 are repeatedly performed to obtain multi-layer multilayer films with different element ratios, stress states and structural modulations, and the others are the same as Embodiment 1.

specific Embodiment approach 3

[0034] Specific Embodiment 3: The difference between this embodiment and Embodiment 1 is that step 3 is performed, and the thin film preparation process of traditional arc ion plating is performed.

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Abstract

The invention relates to a multi-stage magnetic field straight pipe magnetic filtration and pulsed bias compounded electrical arc ion plating method, and belongs to the technical field of material surface treatments. In the prior art, plasma transmission efficiency is low and pulsed bias can not completely remove large particles due to applying of magnetic filtration on an arc source. A purpose of the present invention is to solve problems in the prior art. The method comprises: 1, connecting a workpiece to a pulsed bias power supply, connecting an electrical arc ion plating target source to a target power supply, and connecting a multi-stage magnetic field straight pipe magnetic filtration device in front of the target source; 2, carrying out thin film deposition, wherein work gas is introduced until achieving 0.01-10 Pa when a pressure in a vacuum chamber is less than 10<-2> Pa, the pulsed bias power supply is opened, a pulsed bias amplitude value, frequency and a duty ratio are adjusted, the target power supply is opened, plasma is generated, the multi-stage magnetic field straight pipe magnetic filtration device is opened, removal of large particles and efficient transmission of the plasma in the magnetic filtration device are achieved, process parameters are adjusted, and a thin film with no large particle defect is rapidly produced; and 3, adopting a single-stage magnetic field to combine direct current / pulsed bias to obtain a thin film with a certain thickness.

Description

technical field [0001] The invention relates to an arc ion plating method combined with multistage magnetic field straight tube magnetic filtering and pulse bias voltage, belonging to the technical field of material surface treatment. Background technique [0002] Arc ion plating technology originated from the former Soviet Union in the 1960s. After the introduction and promotion of the technology by the United States, it was applied to the preparation of TiN hard film on the surface of the tool, which greatly improved the cutting performance and service life of the tool, and caused a lot of problems. A wide-ranging tool technology revolution has realized the industrialization of this technology. At the same time, arc ion plating technology has also been widely used in decorative films, high-temperature protective coatings and functional films. [0003] Arc ion plating has the advantages of high ionization rate (70-90%), fast deposition rate, dense and uniform film layer, h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
Inventor 魏永强宗晓亚蒋志强文振华陈良骥
Owner ZHENGZHOU UNIVERSITY OF AERONAUTICS
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