Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film surface planarization method, array substrate, manufacturing method of array substrate and display device

A technology for surface planarization and array substrates, which is applied in the field of thin film surface planarization and can solve problems such as surface flatness damage

Inactive Publication Date: 2013-08-21
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a thin film surface planarization method, an array substrate and its preparation method, and a display device, which solves the technical problem that the existing dry etching greatly damages the flatness of other film layers below the etched film layer, Thereby improving the transmittance and contrast of LCD

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film surface planarization method, array substrate, manufacturing method of array substrate and display device
  • Thin film surface planarization method, array substrate, manufacturing method of array substrate and display device
  • Thin film surface planarization method, array substrate, manufacturing method of array substrate and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The invention provides a processing method for flattening the surface of a film after dry etching. After pattern etching is performed on a non-metal layer by dry etching, the surface of a first film layer exposed after dry etching is flattened Processing to restore the flatness of the first film layer whose surface is rough due to dry etching, and the first film layer is located under the non-metal layer.

[0039] Dry etching is a pattern transfer method commonly used in the semiconductor field, usually in the form of ion bombardment, bombarding the film layer that is not protected by photoresist (or other protective layer), thereby removing the film layer protected by the photoresist The graphics are retained, but at the same time it will damage the surface flatness of the first film layer under the etched film layer (the damage is particularly serious when the first film layer is made of non-metallic material), making the first film layer rough. Subsequent film formation...

Embodiment 2

[0051] This embodiment provides a method for preparing an array substrate, such as figure 1 As shown, the method includes:

[0052] 101. Perform pattern etching on the non-metal layer by dry etching, and after pattern etching on the non-metal layer by dry etching, the method further includes:

[0053] 102. Perform a surface planarization treatment on the first film layer, so that the first film layer whose surface is rough due to dry etching is restored to be flat, and the first film layer is located below the non-metal layer.

[0054] Wherein, the first film layer described in this embodiment is a general term for the film layer located below the etched film layer. For example, optionally, for an array substrate with a bottom gate structure, when the non-metal layer is a semiconductor layer, the The first film layer is a gate insulating layer.

[0055] During the preparation process of the array substrate, it is often necessary to use dry etching to etch the non-metallic layer, but d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a thin film planarization method, an array substrate, a manufacturing method of the array substrate and a display device, and relates to the field of display. The technical problem that in existing dry etching, damage to the planeness of the surfaces of other film layers below a film layer which is etched is large can be solved, and accordingly the displaying performance of a liquid crystal displayer is improved. The manufacturing method of the array substrate comprises the steps of conducting pattern etching on a non-metal layer by the adoption of the dry etching, and after conducting pattern etching on the non-metal layer by the adoption of the dry etching, conducting surface planarization processing on a first film layer to enable the first film layer with a rough surface caused by the dry etching to recover to planeness. The first film layer is located below the non-metal layer.

Description

Technical field [0001] The invention relates to the field of display, in particular to a method for flattening the surface of a film, an array substrate, a preparation method thereof, and a display device. Background technique [0002] Dry etching is a commonly used process in the field of semiconductor manufacturing. It usually uses a radio frequency source to cause a plasma discharge phenomenon in the working gas to generate ions (Ion) and free radicals (Radical). These ions and free radicals act on the electric field. Substances deposited on the substrate that are not covered by the photoresist are subjected to ion bombardment, thereby transferring the pattern specified by the mask to the substrate. [0003] In the process of LCD array substrate processing, dry etching is generally used to pattern-etch non-metallic layers such as semiconductor layers, but dry etching usually uses ion bombardment, which affects other layers below the etched film layer. (For bottom-gate TFTs, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/306
CPCG02F1/136286G02F1/133357G02F1/136295H01L21/3065H01L21/308
Inventor 陈磊夏子祺代伍坤李嘉鹏金秀洪王凤国张磊仇淼
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com