Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An Electron Beam Exposure Method Using Ultraviolet Curing Glue

A technology of electron beam exposure and electron beam lithography, which is applied to the processing of circuits, electrical components, photosensitive materials, etc., can solve the problems of incompatibility of developing process and limit the application range of LOL, so as to reduce the corrosion of developing solution and improve the cross-sectional shape appearance, contrast-enhancing effects

Active Publication Date: 2016-03-02
PEKING UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the development processes of the two are not compatible in all electron beam processing processes, which limits the application range of LOL

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An Electron Beam Exposure Method Using Ultraviolet Curing Glue
  • An Electron Beam Exposure Method Using Ultraviolet Curing Glue
  • An Electron Beam Exposure Method Using Ultraviolet Curing Glue

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] 1. Clean the substrate and apply the HMDS adhesive layer.

[0037] The material of the substrate in this embodiment is Si. Using a vacuum oven, gaseously adsorb the HMDS adhesive layer on the substrate. The temperature of the vacuum oven is 180°C, and the time is 40s.

[0038] 2. Spin-coat the lift-off layer photoresist LOL with a thickness of 40nm.

[0039] The thickness of LOL will affect the undercutting and graphics accuracy, the determination of the thickness is related to the line width requirement, the smaller the line width, the thinner the LOL.

[0040] 3. Substrate baking (baking before peeling off the layer).

[0041] The role of baking is to remove the residual solvent in the film. It is a standard process provided by photoresist manufacturers and is carried out according to the recommended conditions of LOL. The recommended condition of LOL in this embodiment refers to 170° C., using a hot plate to bake for 5 minutes.

[0042] 4. Spin-coat negative ele...

Embodiment 2

[0056] 1. Clean the substrate and apply the HMDS adhesive layer.

[0057] The material of the substrate in this embodiment is Si. Spin-coat liquid HMDS with a homogenizer at 3000rpm for 10s, then bake with a hot plate under the following conditions: temperature 98°C, time 5min

[0058] 2. Spin-coat the lift-off layer photoresist LOL with a thickness of 40nm.

[0059] 3. Substrate baking (baking before peeling off the layer).

[0060] The recommended conditions of LOL in this embodiment refer to 150°C, and bake in an oven for 40 minutes.

[0061] 4. Spin-coat negative electron beam photoresist AR-N7520 with a thickness of 150nm.

[0062] figure 1 It is a schematic diagram after spin-coating two-layer photoresist AR-N7520 / LOL.

[0063] 5. Substrate baking (beam photoresist pre-baking).

[0064] According to the recommended conditions of AR-N7520. Here, the recommended conditions for AR-N7520 are 75°C, baked in an oven for 35 minutes.

[0065] 6. Electron beam exposure (p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to an electron beam exposure method implemented by the aid of ultraviolet setting adhesive. The electron beam exposure method includes steps of 1), cleaning a substrate and coating an adhesion layer on the substrate; 2), spinning stripping layer photoresist on the adhesion layer; 3), baking the substrate; 4), spinning electron beam photoresist with ultraviolet sensitivity on the stripping layer photoresist; 5), baking the substrate; 6), performing electron beam exposure for the electron beam photoresist; 7), developing the electron beam photoresist; 8), irradiating a graph of the developed electron beam photoresist by ultraviolet rays so that the electron beam photoresist is subjected to cross-linking and solidifying; and 9), developing the stripping layer photoresist. The electron beam exposure method has the advantages that the ultraviolet sensitivity of the electron beam photoresist is utilized, a ratio of the developing speed of an LOL (loss-of-lock) stripping layer to the developing speed of the electron beam photoresist is increased by an ultraviolet setting adhesive manner, processing compatibility of double photoresist layers is realized, and sheer photoresist side walls can be obtained.

Description

technical field [0001] The invention belongs to the field of micro-nano electronic device processing and micro-nano electronic mechanical system processing technology, and specifically relates to an electron beam exposure process method using ultraviolet curing glue. Background technique [0002] With the expansion of microelectronics technology to the nanometer level, electron beam direct writing exposure technology has become an important part of the processing technology of nanoelectronic devices and nanoelectromechanical systems. Electron beam exposure technology is widely used in scientific research fields such as new device development and new structure manufacturing due to its good controllability, high precision, and strong flexibility, and is gradually applied to large-scale industrial batch production. However, due to the existence of the proximity effect and the Gaussian distribution of electrons, it is very difficult to obtain an undercut photoresist structure in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/36G03F7/26
Inventor 刘鹏王玮田大宇姜博岩杨芳戴小涛张大成
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com