Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a phase change unit and two side wall electrodes, wherein the side wall electrodes are respectively located on two opposite side walls of the phase change unit. The phase change unit comprises three structures, wherein a phase change material layer is clamped between an upper insulation material layer and a lower insulation material layer. The first side wall electrode and the second side wall electrode contact the end face of the phase change material layer. By arranging the side wall electrodes, the connection method of the electrodes and phase change material is changed, the contact area of the electrodes and the phase change material can be reduced by utilizing existing preparation technique, therefore small driving current can be obtained, and the continually-improving demands of semiconductor device integration can be met.

Description

technical field [0001] The invention relates to the semiconductor field, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the rapid development of the information industry, the requirements for memory are getting higher and higher. Phase-change random access memory (PCRAM) has the advantages of high-efficiency reading, high erasability, non-volatility, small cell area, low power consumption, low cost, multi-level storage, strong shock resistance and radiation resistance. It has become a research hotspot of storage technology at present. [0003] Phase change random access memory utilizes the property that phase change materials have different resistance values ​​in different states to record data. When the phase change material is in a crystalline state, it has a lower electrical resistance, and when the phase change material layer is in an amorphous state, its electrical resistance is higher. Therefore, data c...

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Problems solved by technology

[0006] With the continuous improvement of the integration level of semiconductor devices, the requirement for the low value of the driving current is getting higher and higher, but the driving current of the existing devices is difficult to meet this requirement

This is because, in the existing phase change unit, the upper electrode / phase change material / lower electrode connection method is adopted, and it is difficult to obtain a smaller contact area of ​​the lower electrode by using the existing photolithography and etching process

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