Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for removing fingerprints and heavy oil stain of monocrystalline silicon wafers

A single crystal silicon wafer, fingerprint printing technology, applied in the field of texturing

Inactive Publication Date: 2013-07-03
上海晶太新能源科技有限公司
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The existing monocrystalline silicon solar cell silicon wafer pre-cleaning and alkaline texturing process can achieve a good texturing effect for the removal of general organic and inorganic impurities on the surface of the silicon wafer and subsequent texturing, but without adding other steps Now, it has been an unsolved problem to remove fingerprints and heavy oil stains on the surface of silicon wafers with a simple method and to obtain the ideal surface of suede and silicon wafers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Weigh 0.5 g of lipase (enzyme activity ≥ 3000.0 U / g), dissolve it in 1 L of deionized water, add 8 g of sodium hydroxide, and wash at room temperature for 2 minutes. Rinse in deionized water. Put into the texturizing liquid that dissolves 1.3% (wt) sodium hydroxide, 3% isopropanol, 0.2% texturizing auxiliary agent, 1‰ lipase afterwards, temperature is controlled at 80 ℃, and texturizes 20 minutes.

Embodiment 2

[0032] Weigh 0.5 g of lipase (enzyme activity ≥ 3000.0 U / g), dissolve it in 1 L of deionized water, add 8 g of sodium hydroxide, and wash at room temperature for 2 minutes. Rinse in deionized water. Put into the texturing liquid that dissolves 1.3% (wt) sodium hydroxide, 3% isopropanol, 0.2% texturizing auxiliary agent, the lipase of 0.05‰ afterwards, temperature is controlled at 80 ℃, texturing 20 minutes.

Embodiment 3

[0034] Weigh 0.5 g of lipase (enzyme activity ≥ 3000.0 U / g), dissolve it in 1 L of deionized water, add 8 g of sodium hydroxide, and wash at room temperature for 2 minutes. Rinse in deionized water. Put into the texturing liquid that dissolves 1.3% (wt) sodium hydroxide, 3% isopropanol, 0.2% texturizing auxiliary agent, lipase of 10‰ afterwards, temperature is controlled at 80 ℃, texturing 20 minutes.

[0035] The method for removing fingerprints and heavy oil stains of single crystal silicon wafers of the present invention makes the suede surface of silicon wafers more uniform after cleaning with enzymes and making texture, which is beneficial to reduce the reflectivity of silicon wafers and the operation of subsequent processes, thereby improving the quality of fingerprints. and silicon wafers contaminated by heavy oil contamination.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention aims at disclosing a method for removing fingerprints and heavy oil stain of monocrystalline silicon wafers. The method comprises the following steps: a, performing pretreatment to a silicon wafer; b, laying the silicon wafer into a flocking groove, into which flocking liquid is injected so as to perform flocking to the silicon wafer; and adding active enzyme in at least one step. Compared with the prior art, the method has the advantages that the effect of obviously removing fingerprints and heavy oil stain on surfaces of silicon wafers can be achieved, suede is more uniform after flocking, the appearance is better, the problems of color spots and degradation of finished products caused by the color spots are effectively reduced, the operation of subsequent processes is convenient, and the purpose of the method is realized.

Description

technical field [0001] The invention relates to a texturing method, in particular to a method for removing fingerprints and heavy oil stains of single crystal silicon wafers suitable for the fields of solar battery monocrystalline silicon wafer pre-cleaning and texturing. Background technique [0002] The existing monocrystalline silicon solar cell silicon wafer pre-cleaning and alkaline texturing process can achieve a good texturing effect for the removal of general organic and inorganic impurities on the surface of the silicon wafer and subsequent texturing, but without adding other steps Under the circumstances, it has been a difficult problem to be solved to remove the fingerprints and heavy oil stains on the surface of silicon wafers and obtain the ideal surface of suede and silicon wafers through a simple method. [0003] Therefore, there is a special need for a method for removing fingerprints and heavy oil stains of single crystal silicon wafers, which has solved the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10B08B3/08C11D7/42C23F1/32
Inventor 叶俊马超
Owner 上海晶太新能源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com