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Photoelectromotive force device and manufacturing method thereof

A technology of photoelectromotive force and manufacturing method, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of low recombination speed, pollution adhesion, fixation, etc., and achieve the prevention of open circuit voltage (Voc, photoelectric conversion efficiency Efficiency effect

Inactive Publication Date: 2015-12-16
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, especially during firing, the adhesion and fixation of contaminants to the back surface of the substrate occurs, so there is a problem that it is extremely difficult to suppress the recombination speed of carriers on the back surface of the substrate intentionally low. The problem

Method used

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  • Photoelectromotive force device and manufacturing method thereof
  • Photoelectromotive force device and manufacturing method thereof
  • Photoelectromotive force device and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment approach 1

[0042] Figure 1-1 to Figure 1-3 It is a figure showing the structure of the solar battery cell which is the photovoltaic device of this embodiment, Picture 1-1 It is a sectional view of main parts for explaining the sectional structure of a solar battery cell, Figure 1-2is a plan view of the solar battery cell viewed from the light-receiving surface side, Figure 1-3 It is a bottom view of the solar battery cell viewed from the side (back side) opposite to the light receiving surface. Picture 1-1 yes Figure 1-2 Sectional view of the main part of the line segment A-A.

[0043] The solar cell unit of this embodiment is such as Figure 1-1 to Figure 1-3 As shown, it is equipped with: a semiconductor substrate 1, which is a solar cell substrate having a photoelectric conversion function and has a pn junction; an antireflection film 4, which is formed on the surface (surface) of the light-receiving surface side of the semiconductor substrate 1, and is used as an antireflecti...

Embodiment approach 2

[0101] In Embodiment 2, as another form of the back reflection film 10 , a case where the back reflection film 10 is formed of a metal foil will be described. Figure 7 is a sectional view of main parts for explaining the sectional structure of the solar battery cell according to this embodiment, and is the same as Picture 1-1 corresponding figure. The solar cell according to Embodiment 2 differs from the solar cell according to Embodiment 1 in that the back reflective film is not a silver sputtered film but is made of aluminum foil (aluminum sheet). The other structures are the same as those of the solar battery cell according to Embodiment 1, and thus detailed description thereof will be omitted.

[0102] Such as Figure 7 As shown, in the solar battery cell of this embodiment, the conductive adhesive 21 arranged on the back aluminum electrode 9 is attached to the back surface of the semiconductor substrate 1 so as to cover the back aluminum electrode 9 and the back insula...

Embodiment approach 3

[0115] In Embodiment 3, a rear surface structure will be described in which the solar battery cells of Embodiment 1 and Embodiment 2 include a metal sheet for connecting the cells when modularizing the solar battery cells. Electrodes for connection.

[0116] In recent years, in order to increase the efficiency of crystalline silicon solar cells, especially the suppression of the recombination speed on the rear surface has become more and more important. In both monocrystalline silicon solar cells and polycrystalline silicon solar cells, there are many cases where the carrier diffusion length exceeds the thickness of the silicon substrate. Therefore, the magnitude of the surface recombination velocity on the back surface of the silicon substrate greatly affects the characteristics of the solar cell.

[0117] On the other hand, when processing from a solar battery cell as a device unit to a solar battery module as an actual product, a plurality of solar battery cells are connec...

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Abstract

It includes: a semiconductor substrate (substrate) having an impurity diffusion layer; a first electrode that penetrates an antireflection film formed on the impurity diffusion layer and is electrically connected to the impurity diffusion layer; The second electrode is formed on the other side of the substrate; and the back reflective film is formed by a metal film formed by a vapor phase growth method or includes a metal foil, and is formed to cover at least the back insulating film, The second electrode includes: an Al-based electrode that is embedded in the opening on the other side of the substrate and connected to the other side of the substrate; and an Ag-based electrode that is provided in a region between the openings on the other side of the substrate. At least a part is electrically connected to the other side of the substrate through the back insulating film, and the area of ​​the Ag-based electrode in the plane of the substrate and the pattern of the silver-based electrode are expanded in the plane of the substrate to the outside by a size corresponding to the diffusion length of the carrier. The sum of the areas of the peripheral regions is 10% or less of the area of ​​the other side of the substrate.

Description

technical field [0001] The present invention relates to a photoelectromotive force device and a manufacturing method thereof. Background technique [0002] In photovoltaic devices in recent years, raw materials and manufacturing processes have been improved with the aim of increasing output. Therefore, in order to realize further higher output, light confinement in the photovoltaic device and suppression of the recombination speed of carriers on the front and back surfaces allow light in a wavelength range that cannot be effectively utilized conventionally to contribute to power generation. The structure and manufacturing method become important. Therefore, it is very important to improve the structure of the rear surface of the substrate that plays a part of the role. [0003] Therefore, with the aim of suppressing the reflection on the back side of the substrate and the recombination velocity on the back surface of the substrate, for example, a technique of forming a fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/04H01L31/18
CPCH01L31/022425H01L31/1804Y02E10/52Y02E10/547H01L31/056H01L31/068Y02P70/50H01L31/02327
Inventor 滨本哲
Owner MITSUBISHI ELECTRIC CORP
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