Semiconductor device and forming method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve the problems of large RC effect and poor performance of semiconductor integrated circuits, etc., and achieve the effect of small RC effect, small K value and good quality
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[0045] As mentioned in the background, the RC effect of the semiconductor device in the prior art is still relatively large, and the performance of the semiconductor integrated circuit is poor.
[0046] After research, the inventors found that in the prior art, when the opening is formed, if the size (width) of the opening is too large, the material used to form the insulating layer will fall into the opening when the insulating layer is subsequently formed, making it difficult to deposit the insulating layer. , it is difficult to form an insulating layer covering the metal line layer and across the opening, and even if the insulating layer is formed, the quality of the air gap is greatly affected. Therefore, limited by the subsequent deposition process, the size (width) of the air gap formed in the prior art is usually small. The small-sized air gap can reduce the K value in the interconnection structure is relatively limited, the RC effect of the semiconductor device is stil...
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