PVD equipment process control method and PVD equipment process control device

Abstract

The invention discloses a PVD (physical vapor deposition) equipment and process control method and device. The PVD equipment and process control method comprises the following steps of: (1) controlling a heating device to heat a reaction chamber with a first set power; (2) detecting the temperature of the reaction chamber to obtain the current temperature of the reaction chamber; (3) judging whether the current temperature of the reaction chamber is higher than a first set temperature or not, implementing the step (4) if the current temperature of the reaction chamber is higher than the first set temperature, and repeating the step (1) if the current temperature of the reaction chamber is not higher than the first set temperature; (4) controlling the heating device to heat the reaction chamber with a second set power, and implementing the step (5); and (5) judging whether the current temperature of the reaction chamber is higher than a second set temperature or not, repeating the step (1) if the current temperature of the reaction chamber is higher than the second set temperature, and repeating the step (4) if the current temperature of the reaction chamber is not higher than the second set temperature. Due to the adoption of the technical scheme, the frequent starting and opening of the heat device during heating can be avoided so that the service life of the heating device can be prolonged, and the heating efficiency and the heating reliability can be improved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a PVD equipment process control method and a PVD equipment process control device. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD for short) technology is the most widely used type of thin film manufacturing technology in the semiconductor industry, and generally refers to a thin film preparation process that uses physical methods to prepare thin films. In the integrated circuit manufacturing industry, it refers specifically to the magnetron sputtering (Magnetron Sputtering) technology, which is mainly used for the deposition of metal films such as aluminum and copper to form metal contacts and metal interconnections. For example: in the process of preparing copper barrier layer and seed layer by PVD technology, the wafer needs to be processed in 4 process steps in sequence. The 4 process steps include: 1) degassing (Degas) proces...

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Problems solved by technology

[0004] The above-mentioned baking process uses an over-temperature protection device to control the temperature of the heating process. During the heating process, the heating device is frequently turned on and off, resulting in a reduction in the service life of the heating device; frequent opening and closing of the heating device will also cause the reaction chamber. Significant fluctuations in chamber temperature, reducing heating efficiency and reliability

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