MOS device and manufacturing method

Abstract

The invention discloses a metal oxide semiconductor (MOS) device, and further discloses a manufacturing method of the MOS device. A source-drain region comprises a source-drain mixing region located in an active region and a source-drain polycrystalline silicon layer located on the upper portion of the source region. A source electrode and a drain electrode are led out by forming metal contact on a germanium silicon polycrystalline silicon layer outside the drain polycrystalline silicon layer. Because the area of the source and drain mixing region in the active region does not necessarily contain the area of metal contact, the area of the active region can be made minimum, and performance and integration levels of the device can be improved. The MOS device can reduce stray capacitance between the source-drain region and a substrate, and can be suitable for being applied to the field of radio frequency (RF). The junction depth of the source-drain mixing region is shallow and can reduce short-channel effect and relieve serious length of diffusion (LOD) effect. The manufacturing method of the MOS device can adequately solve the problems of difficulties in an etching stop aspect in the process and isolation optimization between the grid electrode and the source electrode and the drain electrode, and reduce the number of metal layers and cost of the whole bipolar complementary metal-oxide semiconductor (BICMOS) technology.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a MOS device. The invention also relates to a manufacturing method of the MOS device. Background technique [0002] Semiconductor products have a broad application market. In the fields of industry, agriculture, military and civilian use, semiconductor products play an increasingly important role in control, monitoring, and entertainment. Therefore, a large-scale industry has formed all over the world. Developed countries such as Europe, America and Japan are the first to master the advanced technology from semiconductor design to manufacturing; Asian regions such as South Korea and Taiwan also have a place in semiconductor manufacturing; Having a huge market has also strongly supported the research and development of semiconductor integrated circuit production technology in the last ten years. There are a wide variety of IC products, such as power ...

AI Technical Summary

Problems solved by technology

The disadvantages of the existing MOS devices are: since the source-drain region 105a is in contact with the metal contact 107, the area of ​​the source-drain region 105a must be large enough to contain the area of ​​the contact hole of the metal contact 107, In this way, the area of ​​the source-drain region 105a will be larger, and the parasitic capacitance generated between the source-drain region 105a and the substrate will also be larger.

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