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High-density ferroelectric data storage method realized by piezo response force microscope (PFM) probe

A piezoelectric force microscope and data storage technology, applied in digital memory information, information storage, static memory, etc., can solve the problems of complex hard disk structure, high power consumption and noise, hard disk damage, etc., to achieve large-capacity information storage, Easy to operate and low cost effect

Inactive Publication Date: 2013-06-19
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Secondly, the structure of the hard disk is too complicated, which will cause damage to a certain part and cause the entire hard disk to be damaged.
The information of the hard disk is easy to be changed or deleted by mistake during use, there is a certain risk, and the power consumption and noise are very large
[0010] There are certain problems in the application of the above-mentioned storage materials and information storage methods, especially in the realization of high-density information storage.

Method used

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  • High-density ferroelectric data storage method realized by piezo response force microscope (PFM) probe
  • High-density ferroelectric data storage method realized by piezo response force microscope (PFM) probe
  • High-density ferroelectric data storage method realized by piezo response force microscope (PFM) probe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] First, prepare a vinylidene fluoride-trifluoroethylene copolymer P(VDF-TrFE) solution, the molar ratio of vinylidene fluoride to trifluoroethylene is 68:32, the solvent is 2-butanone, and its concentration is 10 mg / mL ; Then a 50 nm-thick film was fabricated on a gold-coated silicon wafer substrate by spin coating at 2000 rpm for 40 seconds; then its storage performance was tested using a piezoelectric force microscope (PFM) from NT-MDT. ,like figure 1 As shown, the main steps are as follows: first, pre-polarization of the ferroelectric polymer film is carried out, and the PFM probe is used to perform pre-polarization treatment on the film with a voltage of -10 V; A constant force field is applied to the upper half of the surface, and the magnitude of the force is 200nN. At this time, its phase changes and can maintain this state. The phase diagram is as follows figure 2As shown, the upper part of the figure is erased by force field, and its phase is changed, so that...

Embodiment 2

[0032] The difference between this embodiment and Example 1 is that the concentration of the polymer solution of the vinylidene fluoride-trifluoroethylene copolymer is 5 mg / mL. A thin film sample with a thickness of 20 nm was prepared by the same method. On its surface, a constant force can also be used to store information and erase data with an electrical signal, with a force of 300nN.

Embodiment 3

[0034] The difference between this embodiment and Example 1 is that the concentration of the polymer solution of the vinylidene fluoride-trifluoroethylene copolymer is 20 mg / mL. A thin film sample with a thickness of 150 nm was prepared by the same method. On its surface, a constant force can also be used to store information and erase data with an electrical signal, with a force of 400nN.

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Abstract

The invention relates to a high-density information storage method realized by a piezo response force microscope (PFM) probe. A film forming method that a copolymer solution of vinylidene fluoride and trifluoroethylene is spun on a conductive silicon substrate is adopted for preparing a sample, a PFM probe is applied to apply a force field on the surface of a film after being polarized to change a piezoelectric phase of the polarize film so as to record information, and the information can be erased under the polarization condition of an electric field. The high-density information storage method provided by the invention has a great application prospect in information storage, information can be conveniently stored, and the possibility is provided for achieving high-capacity high-density data storage in nano scale. Compared with the existing storage method, the high-density information storage method provided by the invention has the advantages that an implementation manner is simple, the cost is low and the application range is wide.

Description

technical field [0001] The invention relates to a high-density information storage method, in particular to a high-density ferroelectric data storage method realized by a piezoelectric force microscope probe. Background technique [0002] With the continuous development of information technology, people's demand for information is also increasing. The way of information data storage is also constantly changing and enriching. From the earliest knots to record information, to today's fast and large-capacity information storage tools such as optical discs, magnetic disks, hard disks, and flash memory. But now, the storage capacity of optical discs and magnetic disks still cannot meet people's needs well. How to increase the density of information storage and improve the way of information storage is a very important issue. [0003] Optical discs and hard drives are currently the two most important mass storage tools. Its information is stored and read mainly through optical...

Claims

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Application Information

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IPC IPC(8): G11C11/22
Inventor 沈群东陈昕唐鑫
Owner NANJING UNIV
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