Semiconductor layer structure, polysilicon thin film transistor, manufacturing method and display device

A technology of polysilicon thin film and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, transistors, semiconductor devices, etc., can solve the problems of small grain size, high grain boundary defect density, poor electrical performance and reliability, etc., and achieve improvement Effects of grain uniformity, reduction of grain boundary defects, and improvement of electrical properties

Inactive Publication Date: 2013-05-29
BOE TECH GRP CO LTD +1
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The grain size formed by traditional MIC technology is very small, the carrier mobility is low, the grain boundary defect density is high, and the electrical performance and reliability of TFT are not good.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor layer structure, polysilicon thin film transistor, manufacturing method and display device
  • Semiconductor layer structure, polysilicon thin film transistor, manufacturing method and display device
  • Semiconductor layer structure, polysilicon thin film transistor, manufacturing method and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0069] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the following will clearly and completely describe the technical solutions of the embodiments of the present invention in conjunction with the drawings of the embodiments of the present invention. Apparently, the described embodiments are some, not all, embodiments of the present invention. Based on the described embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0070] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. "First", "second" and similar words used in the patent application specification and claims of the present invention do not indicate any order, quantity ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a semiconductor layer structure, a polysilicon thin film transistor, a manufacturing method and a display device. By adopting the grain boundary connecting line technology, namely micro doping area used for connecting a grain boundary is formed at the grain boundary in a semiconductor layer made of polysilicon, grain boundary defects of polysilicon can be reduced, grain uniformity is improved, and electrical performance of a thin film transistor is improved.

Description

technical field [0001] The invention relates to a manufacturing process of a thin film transistor (TFT), in particular to a semiconductor layer structure applied to a display device such as an electroluminescent display (ELD), a polysilicon thin film transistor and a corresponding manufacturing method. Background technique [0002] With the improvement of people's living standards, people's requirements for display quality are getting higher and higher. Liquid crystal display (LCD) can no longer meet market demand, which objectively promotes the development of display technology, and new display technologies continue to emerge. Among them, electroluminescent display technology (ELD: Electro Luminescent Display) is the latest display technology, which has advantages such as high contrast, high brightness, self-illumination, wide color gamut, thin and portable, and is considered to be the most potential "dream". Displays will definitely become the mainstream of display in the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/78696
Inventor 王祖强
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap