Nanowire semiconductor gas sensitive material based on GaN-Ga2O3 core-shell structure

Abstract

The invention relates to a nanowire semiconductor gas sensitive material based on a GaN-Ga2O3 core-shell structure, belonging to the technical field of electron gas sensitive devices. The nanowire semiconductor gas sensitive material is characterized in that the surface layer of a GaN nanowire with diameter of 50-500nm is oxidized at high temperature into a layer of Ga2O3 with the thickness of 5-20nm, so that a nanowire semiconductor gas sensitive material with the GaN-Ga2O3 core-shell structure is obtained, and the nanowire semiconductor gas sensitive material with the GaN-Ga2O3 core-shell structure can be used for detecting gases with harmful neuron, such as oxygen, heavy hydrogen, hydrogen sulfurous gas, nitric oxide, various hydrocarbon gases and ammonia. The nanowire semiconductor gas sensitive material has the beneficial effects that the size of a carrier nanowire is easy to manufacture, the thickness of the Ga2O3 sensitive material obtained through oxidation is 5-20nm, which approximates to the size of a debye depletion layer, so that response of high sensitivity to the gas is obtained, the problem of direction preparation of Ga2O3 nanowire with diameter of 5-20nm is solved, the preparation cost is further lowered, and the cost is saved.

Description

technical field [0001] The invention belongs to the technical field of electronic gas sensor and relates to a GaN-Ga based 2 o 3 Core-shell structure nanowire semiconductor gas-sensing material. Background technique [0002] Ga 2 o 3 It is a good semiconductor metal oxide gas-sensing material for O 2 , H 2 And a variety of hydrocarbon gases have a good response. Generally, the smaller the particle size of this type of gas-sensitive material, the higher the response sensitivity to gas detection. Ga 2 o 3 The main nanostructures include nanoparticles and nanowires. Ga 2 o 3 The particle size of the nanoparticles can reach 10-20nm, which is close to the Debye surface depletion size, so that a large sensing signal can be obtained. However, because the nanoparticles are small and have a large active specific surface area, they are prone to agglomeration after long-term use under high temperature or other similar environments, resulting in poor sensor performance stabi...

AI Technical Summary

Problems solved by technology

However, because the nanoparticles are small and have a large active specific surface area, they are prone to agglomeration after long-term use under high temperature or other similar environments, resulting in poor sensor performance stability and signal repeatability

While a single Ga with a one-dimensional structure 2 o 3 Although nanowires can overcome the above-mentioned problem of particle agglomeration and maintain the high sensitivity of the sensor, under the existing process conditions, Ga 2 o 3 Nanowires have high requirements on the process, resulting in a significant increase in the cost of the sensor

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