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Pulse drive circuit of semiconductor laser based on avalanche transistor

A technology of pulse driving and driving circuit, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of high cost, inconvenient parameter adjustment, difficult loop optimization and coordination, etc., and achieve the effect of ensuring synchronization and compact overall structure.

Inactive Publication Date: 2013-05-08
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, a high-power laser is generally used to cooperate with optical fiber transmission to establish a laser trigger system. This system can realize the synchronous transmission of light energy, but it needs a complete set of peripheral equipment to cooperate with the work, which is costly, difficult to optimize and cooperate with the circuit, and inconvenient to adjust parameters.

Method used

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  • Pulse drive circuit of semiconductor laser based on avalanche transistor
  • Pulse drive circuit of semiconductor laser based on avalanche transistor
  • Pulse drive circuit of semiconductor laser based on avalanche transistor

Examples

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Embodiment Construction

[0020] The present invention will be further described below in conjunction with the drawings and specific embodiments.

[0021] figure 1 It is a block diagram of the pulsed laser drive power module circuit structure based on the current switch of the avalanche transistor. It utilizes the characteristics of the current rising sharply when the carriers inside the transistor undergo an avalanche breakdown, and can obtain a rapid current rising edge on the laser diode. The DC source charges the energy storage capacitor 4 through the diode D to provide a voltage bias for the avalanche transistor 3, making it in a critical state. When the trigger signal arrives, the internal carriers of the 3 avalanche, and the capacitor 4 passes through the avalanche transistor 3 and quickly passes through the laser Diode 5 discharges. The optical pulse emitted by the laser diode is directly modulated by the electric pulse generated by the driving power supply. The rising edge of the current is l...

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Abstract

The invention belongs to the technical field of semiconductor lasers, and particularly relates to a pulse drive circuit of a semiconductor laser based on an avalanche transistor. The pulse drive circuit comprises an outlaid high-voltage adjustable direct-current power supply, a charge-discharge return circuit which comprises a lasing diode, an energy storage capacitor, and a avalanche transistor a programmable delayer, a drive circuit for the avalanche transistor. In the charge-discharge return circuit, an emitting electrode of the avalanche transistor is grounded through a sampling resistance,a collecting electrode is connected with the energy storage capacitor, the other end of the energy storage capacitor is connected with the cathode of the lasing diode and the anode of the lasing diode is grounded. The pulse drive circuit is adopted that the capacitance discharges quickly toward the lasing diode through the avalanche transistor to produce the quick drive current in order to gain the quick optical pulse. A rising edge of the pulse current is less than 5 nanoseconds and the pulse width is from 20 n s to 1 u s, and the peak value of the pulse current is continuously adjustable from 10 amperes to 100 amperes. Due to the fact that the pulse drive circuit comprises the precise delayer, the pulse drive circuit is suitable for the multi-path trigger device in need of accurate synchronization.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to a semiconductor laser pulse drive circuit based on an avalanche transistor, which can be used to drive a semiconductor laser (laser diode) to provide energy for triggering a photoconductive switch. Background technique [0002] In recent years, the synchronous trigger technology of multiple switches in the field of pulse power has become an important direction for the development of pulse power technology. In 2003, Sandia Laboratories of the United States disclosed a new multi-channel trigger technology. An important direction is the multi-channel synchronous trigger technology based on photoconductive semiconductor switches (PCSS). In the multi-channel trigger device of the photoconductive semiconductor switch (PCSS), it is necessary to ensure good synchronization of the trigger light pulses of each channel, and to provide suitable trigger energy for the...

Claims

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Application Information

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IPC IPC(8): H01S5/042
Inventor 卢元达刘克富邱剑王宝杰张田
Owner FUDAN UNIV
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