Forming method of semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device formation, can solve problems such as poor performance, achieve the effects of reducing RC effect, improving performance, and reducing effective K value

Active Publication Date: 2015-01-21
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, the performance of semiconductor devices formed using existing technologies in semiconductor integrated circuits is poor

Method used

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  • Forming method of semiconductor device
  • Forming method of semiconductor device

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Embodiment Construction

[0038] As mentioned in the background, semiconductor devices formed in the prior art have poor performance in semiconductor integrated circuits.

[0039] Please continue to refer Figure 5 After research, the inventor found that the reason for the poor performance of the semiconductor integrated circuit in the prior art is that there are more interlayer dielectric layers 103 between two adjacent trenches, resulting in a higher effective K value in the interconnection layer. .

[0040] The inventors have found that if a sacrificial layer is formed by oxidizing the sidewall of the trench 107 without using a deposition process, the process steps can be reduced. Please refer to figure 2 , removing the patterned photoresist layer 105 by using an ashing process (please refer to figure 2 ) while oxidizing the interlayer dielectric layer 103 on the sidewall of the trench 107 to form a sacrificial layer, and then filling the trench 107 with conductive metal and removing the sacrifi...

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Abstract

An embodiment of the invention provides a forming method of a semiconductor device. The forming method of the semiconductor device comprises that a semiconductor substrate is provided, wherein an inter-lamination dielectric layer is formed on the surface of the semiconductor substrate and is provided with a groove; partial inter-lamination of the lateral wall of the groove is oxidized to form an oxidation layer; an oxidation layer with partial thickness is close to the lateral wall of the groove and is nitrided to form a protective layer of the lateral wall of the groove and a sacrificial layer between the inter-lamination dielectric layer and the protective layer; after the protective layer is formed, the groove is filled up to form electric leads on the same level with the surface of the inter-lamination dielectric layer; and the sacrificial layer is removed to form an air gap. The forming method of the semiconductor device can form the air gap with good uniformity, effectively reduces an effective K value of the interconnecting layer, can not damage the electric leads, and improves performance of the semiconductor device in a semiconductor circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] As the semiconductor industry enters a new era of high-performance and multi-functional integrated circuits, the density of components in integrated circuits will increase, while the size of components and the spacing between parts or components will decrease accordingly. In the past, the achievement of the above objectives was limited only by the ability of photolithography to define the structure. In the prior art, the geometric features of the components with smaller dimensions have created new limiting factors. For example, when the distance between the conductive patterns decreases, the capacitance generated by any two adjacent conductive patterns (which is a function of the dielectric constant K of the insulating material used to separate the distance between the conductive patter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP
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