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LED (Light-Emitting Diode) epitaxial structure and preparation method thereof

A technology of epitaxial structure and light shielding layer, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of light damage of quantum well layer, and achieve the effect of stable performance, good shielding effect and high melting point

Inactive Publication Date: 2013-05-01
BRILLIANT LIGHT TECH
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Problems solved by technology

[0005] In the prior art, the LED epitaxial structure has the problem that the quantum well layer of the LED epitaxial structure will be damaged by light when it is subjected to laser lift-off. The present invention provides an LED epitaxial structure capable of solving the above problems and a preparation method thereof

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  • LED (Light-Emitting Diode) epitaxial structure and preparation method thereof
  • LED (Light-Emitting Diode) epitaxial structure and preparation method thereof
  • LED (Light-Emitting Diode) epitaxial structure and preparation method thereof

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Embodiment Construction

[0056] In the LED epitaxial structure of the prior art, a buffer layer, a sacrificial layer, an N-type GaN layer, a quantum well layer, and a P-type GaN layer are sequentially grown on the substrate, but when the substrate is lifted off by laser , the laser light will pass through the buffer layer, the sacrificial layer and the N-type gallium nitride layer and cause damage to the quantum well layer. After in-depth research on the prior art LED epitaxial structure, the inventor found that the absorption efficiency of the buffer layer, the sacrificial layer and the N-type gallium nitride layer to the laser light is low, which causes the laser light to pass through the buffer layer, the sacrificial layer and the N-type gallium nitride layer. Gallium nitride layer, when a light-shielding layer is prepared between the sacrificial layer and the quantum well layer, the absorption rate of the light-shielding layer for the laser light used to lift off the substrate is greater than that ...

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Abstract

The invention relates to an LED (Light-Emitting Diode) epitaxial structure, which comprises a substrate, a buffer layer, a sacrificial layer, an N type gallium nitride layer, a quantum well layer and a P type gallium nitride layer which are sequentially arranged from bottom to top, wherein a light shielding layer is also arranged between the sacrificial layer and the quantum well layer, and the light shielding layer is one layer or multiple layers of graph-free membranes, or the light shielding layer comprises a plurality of graphical sub light shielding layers and connecting layers; and the graphs of the sub light shielding layers are mutually matched, so that laser incident from the substrate direction can be blocked by the sub light shielding layers when the substrate is subjected to laser lift-off. Meanwhile, the invention provides a preparation method of the LED epitaxial structure. When the substrate of the LED epitaxial structure is subjected to laser lift-off, the light shielding layer reduces or blocks the laser to penetrate through the light shielding layer to reach the quantum well layer.

Description

technical field [0001] The invention relates to the field of light-emitting diode (LED) manufacturing, in particular to an LED epitaxial wafer and a preparation method thereof. Background technique [0002] Gallium Nitride (GaN) material is a semiconductor with direct bandgap, and its bandgap is continuously adjustable from 1.8 to 6.2eV. It is the material of choice for the production of high-brightness blue, green and white LEDs. The products are widely used in large-screen color displays, vehicles and Traffic signals, indoor and outdoor decorative lighting, landscape decorative lighting, signs and signs, solar street lights, intelligent traffic control and general lighting and other projects, as well as light sources for mobile phones, computers, audio and home appliances, etc. [0003] In the current LED market, due to the problems of current crowding effect and small light-emitting area in the traditional planar electrode structure LED chip, the vertical electrode struct...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/00
Inventor 陈勇
Owner BRILLIANT LIGHT TECH
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