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Graphite plate, reaction chamber with graphite plate, and substrate heating method

A graphite disk and substrate technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of low yield and low uniformity of epitaxial chips, achieve improved uniformity, eliminate heating The effect of unevenness and uniformity improvement

Inactive Publication Date: 2013-05-01
BRILLIANT LIGHT TECH
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Problems solved by technology

[0006] In practice, it is found that the uniformity of the existing chemical vapor deposition process is not high, and the yield rate of epitaxial chips is low

Method used

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  • Graphite plate, reaction chamber with graphite plate, and substrate heating method
  • Graphite plate, reaction chamber with graphite plate, and substrate heating method
  • Graphite plate, reaction chamber with graphite plate, and substrate heating method

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Embodiment Construction

[0045] The uniformity of the chemical vapor deposition process in the prior art is not high, and the yield rate of the epitaxial chip is low. After research by the inventors, it is found that the epitaxial material layer formed on the substrate after the chemical vapor deposition process is not uniform due to uneven heating of the substrate (there is a temperature difference at each point of the substrate). One of the causes of uneven heating of the substrate is that the substrate is warped due to stress during the chemical vapor deposition process. Usually the substrate is placed in a graphite disk, and the two are in contact. The graphite disk can heat the substrate in two ways: heat conduction and heat radiation. When the substrate is warped and deformed, the distances between the points where the substrate should be in contact with the graphite disk and the graphite disk are different, so that the substrate is heated unevenly. Furthermore, the inventors also found that, b...

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Abstract

The embodiment of the invention provides a graphite plate, a reaction chamber with the graphite plate, and a substrate heating method used in a chemical vapor deposition process. The graphite plate comprises a recess. A corresponding supporting frame is arranged at the position of the recess. The supporting frame is used for suspending a substrate, such that the substrate does not contact the graphite plate. According to the invention, the substrate is suspended, such that heat radiation is the main heating form of the heating of the graphite plate upon the substrate. Therefore, heating uniformity upon the substrate and especially a warped and deformed substrate is improved, and chemical vapor deposition process uniformity is improved.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition (CVD), in particular to a graphite disk of a chemical vapor deposition device, a reaction chamber and a heating method for a substrate. Background technique [0002] MOCVD (Metal-Organic Chemical Vapor Deposition) is a chemical vapor phase epitaxy deposition process developed on the basis of vapor phase epitaxy (VPE). It uses organic compounds of Group III and II elements and hydrides of Group V and VI elements as source materials for crystal growth, and deposits various III-V and II crystals on graphite disks by thermal decomposition reaction. - Thin-layer single-crystal materials of Group VI compound semiconductors and their multi-component solid solutions. [0003] The principle of the existing chemical vapor deposition process will be described below. Specifically, taking MOCVD as an example, please refer to figure 1 The schematic structural diagram of the existing chemica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/46
CPCC23C16/458C23C16/46
Inventor 梁秉文
Owner BRILLIANT LIGHT TECH
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