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Method of improving exciton dissociation at organic donor-acceptor heterojunctions

A heterojunction and donor technology, which is applied in semiconductor devices, electrical solid state devices, semiconductor/solid state device manufacturing, etc., can solve the problems of non-strict application and lack of physical meaning of parameters, etc.

Inactive Publication Date: 2013-04-10
RGT UNIV OF MICHIGAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the Shockley equation is not strictly applicable to the organic semiconductor donor-acceptor (D-A) heterojunction (HJ), the extracted parameters lack clear physical meaning

Method used

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  • Method of improving exciton dissociation at organic donor-acceptor heterojunctions
  • Method of improving exciton dissociation at organic donor-acceptor heterojunctions
  • Method of improving exciton dissociation at organic donor-acceptor heterojunctions

Examples

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Embodiment 1

[0206] Fabrication of conventional CuPc / C on glass substrates coated with anodes of transparent indium tin oxide (sheet resistance ~15 ohms / square) pre-patterned into 1 mm wide stripes 60 and SubPc / C 60Battery. All organic materials were purified by thermal gradient sublimation before use. After adequate solvent degreasing of the substrate, at ~10 -7 The sequential deposition of layers was performed by thermal evaporation in a chamber at Torr base pressure. The device is made of 20nm thick CuPc or 11nm thick SubPc followed by 40nm thick C 60 , 10nm-thick bathocuproine and 100nm-thick Al cathode, which are deposited through a mask as 1mm strips placed orthogonally to the patterned anode, forming a 1mm 2 device area.

[0207] The cell efficiency was characterized under simulated AM1.5G irradiation at room temperature in air and found to be comparable to previously reported devices using these material combinations (K.L. Mutolo, E.I. Mayo, B.P. Rand, S.R. Forrest, and M.E. T...

Embodiment 2

[0216] Conventional CuPc / C was fabricated using a method similar to that described in Example 1 60 and SubPc / C 60 battery and conduct property studies. In simple terms, the battery consists of a base pressure of 10 -7 A 20-nm-thick CuPc or 11-nm-thick SubPc layer, followed by a 40-nm-thick C 60 layer, 10nm thick bathocuproine (BCP) and 100nm thick Al cathode.

[0217] Room temperature IMPS is performed in a sealed chamber that can be connected to electricity and light, and the chamber is filled with anhydrous N 2 Purging is continued to minimize device aging. Low temperature data were obtained in a closed-loop, evacuated He cryostat, and the temperature was measured using a Ge thermistor soldered to the surface of the substrate. The use intensity is 30mW / cm 2 Ar + Laser (λ ex =496nm) for excitation; the observed trend is at λ ex =476nm to 514nm range independent of excitation wavelength. A small fraction (2 close to V under IMPS illumination oc τ ~ 5μs is typical fo...

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Abstract

The present disclosure generally relates to organic photosensitive optoelectronic devices and polaron pair recombination dynamics to impact efficiency and open circuit voltages of organic solar cells. The present disclosure also relates, in part, to methods of making organic photosensitive optoelectronic devices comprising the same.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Application No. 61 / 331,798, filed May 5, 2010, which is hereby incorporated by reference in its entirety. [0003] Statement Regarding Federally Funded Research [0004] This invention was made with U.S. Government support under Contract No. DE-SC0000957 awarded by the U.S. Department of Energy and Contract No. DE-SC0001059 awarded by the Argonne-Northwestern Solar Energy Research Center . The Center for Nanoscale Materials is funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under contract number DE-AC02-06CH11357. The US Government has certain rights in this invention. [0005] joint research agreement [0006] The subject matter of this disclosure was made by, on behalf of, and / or jointly by one or more of the following parties to a joint university-corporate research agreement: University of Michigan and Global Photonic Ene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/00H10K99/00
CPCY02E10/549H10K85/623H10K85/311H10K85/371H10K30/30H10K30/60H10K30/50H10K71/164H10K85/211H10K85/215H10K85/622
Inventor 斯蒂芬·R·弗里斯特诺尔·C·吉宾克
Owner RGT UNIV OF MICHIGAN
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