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Method for synthesizing graphene film by chemical reaction

A technology for chemical reaction and synthesis of graphite, applied in the field of graphene film synthesis, can solve problems such as poor electron transport performance of graphene film, and achieve the effects of expanding selectivity, wide source and simple method

Active Publication Date: 2016-06-22
NINGBO RONGHE WIRE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The oxidation-reduction method of graphite uses graphite as the carbon source material and undergoes the oxidation reaction of graphite and the reduction reaction of graphene oxide to obtain reduced graphene oxide; although the electron transport performance of the graphene film synthesized by this method is relatively low. Poor, but graphene films can be synthesized on a large scale; in addition, the carbonaceous material used in the oxidation-reduction method of graphite is only graphite, and there is no other choice

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  • Method for synthesizing graphene film by chemical reaction
  • Method for synthesizing graphene film by chemical reaction
  • Method for synthesizing graphene film by chemical reaction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1: the ionization of alcohols grows graphene film on Si (100) substrate

[0030] Include the following steps:

[0031] 1) Alcohol is dissociated into carbocations under the catalysis of Lewis acid (Lewis acid), and the reaction process is:

[0032] R-OH+H + →R + -OH 2 →R + +H 2 O, where R stands for C n h 2n+1 (n≥1).

[0033] 2) Put the Si(100) substrate in the above reaction solution, and the generated carbon-containing ions R + Adsorbed on the silicon substrate;

[0034] 3) will be adsorbed with R + The substrate is taken out from the solution, and then this substrate is placed in a quartz tube;

[0035] 4) Pass hydrogen to the quartz tube and heat-treat at 930°C for 10min, and finally drop to 20°C at a cooling rate of 50°C / min to obtain a graphene film with a thickness of about 17nm ( figure 2 ).

[0036] Effect: The chemical reaction that produces active carbon atoms or carbon-containing active groups includes but not limited to heterocleava...

Embodiment 2

[0038] Embodiment 2: Taking non-polar carbon-containing compound as raw material method to synthesize graphene film

[0039] Include the following steps:

[0040] 1) Use superacids to extract negative hydrogen ions from non-polar compounds such as alkanes to generate carbocations. The typical process of this type of reaction is:

[0041] (CH 3 ) 3 C-H+SbF 5 ·FSPO 3 H→(CH 3 ) 3 C + +SbF 5 ·FSPO 3 - +H 2

[0042] 2)(CH 3 ) 3 C-H and SbF 5 ·FSPO 3 H undergoes a chemical reaction to form (CH 3 ) 3 C + After carbocations, guide the reaction product onto the Ni polycrystalline substrate;

[0043] 3) Then in H 2 In the atmosphere of / Ar, heat treatment at 1000°C for 10 minutes, and finally reduce the temperature to 25°C by 40°C / min, so that graphene with a thickness of 0.335nm was obtained on the Ni substrate; image 3 is the Raman spectrum of the synthesized graphene.

[0044] Effect: The chemical reactions that produce active carbon atoms or carbon-containing ...

Embodiment 3

[0046] Embodiment 3: the addition reaction synthesis graphene film of unsaturated bond

[0047] A typical reaction process is: R-C=R'+H + → R-C-R'H (R is an alkyl group, R' is O, C, N, S) includes the following steps:

[0048] 1) After reacting alkenes such as butene with acids such as HCl, CH 3 -CH 2 -CH=CH 2 +H + →CH 3 -CH 2 -CH 2 -CH 3 , transfer the reaction product to the polymer polyethylene terephthalate (PET) substrate;

[0049] 2) Then electron beams are used to process the reaction product on the PET. During the treatment, the temperature of the PET substrate is kept at 100°C, and the processing time is 3 hours; finally, the temperature is lowered to 25°C to obtain graphene with a thickness of 50nm film( Figure 4 ).

[0050] Effect: The chemical reactions that produce active carbon atoms or carbon-containing active groups include but are not limited to heterocleavage of halogenated hydrocarbons. Alcohols, ethers, and acyl halides can also be dissociated i...

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Abstract

The invention discloses a method for synthesizing a graphene film through chemical reaction. Through a chemical reaction between a gaseous carbon source, a solid carbon source and a liquid carbon source containing carbon elements or the mixed carbon source material of any two or more of the carbon sources and a chemical reacting substance, carbon atoms in the carbon source material are activated and then deposit on a substrate to grow a graphene film. The method disclosed by the invention is characterized in that the method for producing carbon atoms for synthesizing a graphene film is different from conventional methods such as chemical vapor deposition, the carbon source material for synthesizing a graphene film is widely available, and the synthesis of the graphene film is not restricted by the substrate; the structure and size of the grown graphene film are easy to control; and the method is suitable for preparing graphene films in large scale.

Description

technical field [0001] The invention relates to a synthesis method of a graphene film, in particular to a method for synthesizing a graphene film through a chemical reaction. Background technique [0002] Graphene is a two-dimensional structure material composed of honeycomb single-layer carbon atoms, also known as single-layer graphite; in terms of physical properties, it is generally believed that the material with more than ten layers of graphene stacked is a three-dimensional structure of graphite, carbon nanotubes It is a one-dimensional nanomaterial made of graphene rolled into a barrel. Graphene has excellent two-dimensional electrical, optical, thermal, mechanical properties and chemical stability. Its unique two-dimensional structure and excellent crystallographic quality make it suitable for ultra-fast micro-nano optoelectronic devices, radio frequency devices, clean energy and various Sensors and other fields have important practical value. For example, electron...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 徐明生陈红征施敏敏吴刚汪茫
Owner NINGBO RONGHE WIRE CO LTD
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