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Method for generating dendritic crystal pattern on surface of Cu/Ti film

A film and pattern technology, applied in the field of preparation of Cu/Ti film dendrite pattern

Active Publication Date: 2013-03-27
明石创新(烟台)微纳传感技术研究院有限公司
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Problems solved by technology

However, the phenomenon of dendrite patterns on the surface of Cu / Ti films under annealing conditions has not been reported yet.

Method used

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  • Method for generating dendritic crystal pattern on surface of Cu/Ti film
  • Method for generating dendritic crystal pattern on surface of Cu/Ti film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0015] A kind of preparation technology of Cu / Ti film surface dendrite pattern, concrete steps are as follows:

[0016] Silicon wafer cleaning: use single-sided polished (100) silicon wafers as the substrate, and ultrasonically clean them with acetone, absolute ethanol, and deionized water for 15 minutes before sputtering, and then dry them for half an hour.

[0017] Sputtering: Cu / Ti thin film was prepared by Explorer14 sputtering machine produced by Denton Vacuum Company in the United States; Cu target and Ti target were respectively installed on two DC sputtering target guns, and the purity of both targets was 99.999% . Before sputtering, put the cleaned silicon wafer into the sputtering chamber and evacuate to 2×10 -5 Pa. The continuous sputtering method is used to sputter the Ti film on the silicon wafer first, and then sputter the Cu film. The sputtering powers of Cu and Ti are 99w and 105W respectively, and the sputtering rates are 0.4nm / s and 0.12nm / s respectively. ...

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Abstract

The invention provides a method for generating a dendritic crystal pattern on surface of a Cu / Ti film. The method comprises the following steps of: preparing a Cu / Ti / Si film on a Si (100) substrate by employing a magnetron sputtering method; rapidly annealing a sample in an argon atmosphere by employing rapid heat treatment equipment at the annealing temperature of 600 DEG C, carrying out heat preservation for a certain time, and performing furnace cooling, thereby obtaining the dendritic crystal pattern.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials and relates to the preparation of nanometer materials, in particular to a method for preparing Cu / Ti film dendrite patterns. Background technique [0002] With the development of characterization technology, it has been proved that the random process of thin film growth has self-similarity, so its growth also has fractal characteristics. Under non-equilibrium conditions, such as during agglomeration and electrodeposition, complex dendrite patterns are generated. Dendrite structure is also a kind of fractal structure. The compounds of Cu and Cu can also produce dendrite patterns by using certain preparation methods. For example, Cu can form bush-like dendrite patterns in the hydrothermal method, and Cu and S can form flower-like dendrite patterns by reacting in a water bath. Dendrite patterns, etc. [0003] As a typical metallic material, the Cu / Ti thin film system has attracted exte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/58
Inventor 蒋庄德林启敬杨树明王琛英
Owner 明石创新(烟台)微纳传感技术研究院有限公司
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