Schottky diode and method of making the same

Abstract

The present invention provides a Schottky diode and its manufacturing method. The Schottky diode and its manufacturing method in the present invention set a first doped region and a second doped region, and the first doped region is evenly distributed in the Inside the potential barrier region, the second doped region is formed between the first doped region and the surface of the epitaxial layer, and each of the second doped regions is one-to-one with the first doped region corresponding contact. After a certain reverse voltage is applied to the first doped region, the PN junction depletion expansion region under the first doped region will be connected together to protect the Schottky barrier and reduce the room temperature leakage of the Schottky diode, thereby achieving The purpose of increasing the operating junction temperature of the Schottky diode is improved, and the high temperature stability of the Schottky diode is significantly improved.

Description

technical field [0001] The invention relates to discrete device chip manufacturing technology, in particular to a Schottky diode and a manufacturing method thereof. Background technique [0002] Schottky diodes are favored by designers in the diode market due to their own advantages such as low forward voltage drop and fast recovery time. Today, with the theme of energy saving and environmental protection, the energy saving advantages of Schottky diodes should not be underestimated. ; Today, as the semiconductor manufacturing process is becoming more and more mature, people have higher and higher performance requirements for Schottky diodes. The selection criteria of Schottky diodes can basically be summarized as low forward voltage drop, high forward withstand current, low reverse leakage current, etc. In solar energy and other fields, Schottky diodes used as protective diodes are in addition to the above parameter requirements , There is also a higher requirement for the ...

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Problems solved by technology

[0007] The pass area sacrifices the forward voltage drop;

[0008] 2) Although this solution improves the normal temperature leakage current to a certain extent, because of the superficial doping, the reverse PN junction depletion region is not completely pinched off, its high temperature performance is still not ideal, and its high temperature stability is poor

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