New method for induced synthesis of nano-crystals through using inorganic complex of Sn (IV)

A technology of nanocrystals and complexes, applied in the field of nanomaterials, can solve problems such as limited application and poor electrical properties of materials, and achieve the effects of enhanced electrical conductivity, good repeatability, and good assembly behavior.

Inactive Publication Date: 2013-03-20
HENAN UNIVERSITY
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Organic surfactants (such as oleic acid, oleylamine, etc.) are the key controlling factors in self-assembly technology, but due to the insulating properties of these long-chain organic systems, the electrical properties of the final materials are usually poor, which also limits its Applications in Nano Devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • New method for induced synthesis of nano-crystals through using inorganic complex of Sn (IV)
  • New method for induced synthesis of nano-crystals through using inorganic complex of Sn (IV)
  • New method for induced synthesis of nano-crystals through using inorganic complex of Sn (IV)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Synthesis of sheet-like hexagonal Cu with one-dimensional assembled structure 2 S nanocrystals: 0.0524 g (0.2 mmol) Cu(acac) 2 , 0.0388 g (0.1 mmol) Sn(acac) 2 Cl 2 and 5 mL of dodecyl mercaptan were mixed evenly, and mixed and heated to 200 under the protection of nitrogen oC and leave it on for 1 hour. After cooling to room temperature, the resulting reaction product is a sheet-like hexagonal Cu with one-dimensional assembly 2 S nanocrystals. Topography such as figure 1 shown.

Embodiment 2

[0018] Synthesis of sheet-like hexagonal Cu with three-dimensional assembled structure 2 S nanocrystals: 0.0388 g (0.1mmol) Sn(acac) 2 Cl 2 After mixing with 5 mL of dodecyl mercaptan, mix and heat under nitrogen protection for 200 oC A clear solution of the complex of Sn(IV) was obtained. Cool to room temperature, then add 0.0524 g (0.2 mmol) Cu(acac) to this solution 2 , mixed under nitrogen and reheated to 200 oC and kept for 1 hour, the particle size variation obtained by sampling at different times in the reaction process is as follows: figure 2 shown. After cooling to room temperature, the resulting reaction product is a three-dimensionally assembled sheet-like hexagonal Cu 2 S nanocrystals (as image 3 ) solution. The I-V characteristics of the nanocrystals obtained after purification and the I-V characteristics of the nanocrystals coated with dodecyl mercaptan are compared as shown in Figure 5 shown.

Embodiment 3

[0020] Synthetic flaky hexagonal Cu 2-x Se nanocrystals and sheet-like hexagonal Cu with three-dimensional assembly 2-x Se nanocrystals: 0.125g (0.2mmol) copper stearate, 0.6mmol oleic acid, 1.2mmol oleyl ammonia and 6 mL octadecene were mixed and added to a 50 mL three-necked bottle, and gradually heated to 200 o C, and keep for 1h, get hexagonal flake Cu 2-x Se nanocrystals (such as Figure 4 A): Synthesis of Cu with 3D assembly 2-x Se nanocrystals: 0.0388 g (0.1 mmol) Sn(acac) 2 Cl 2 Mix well with 10 mL selenium solution (selenium dissolved in octadecene, the concentration is 0.1M), mix and heat under nitrogen protection for 200 oC A clear solution of the complex of Sn(IV) was obtained. Cool to room temperature, then add 0.125 g (0.2 mmol) Cu(St) to this solution 2 , 0.6mmol oleic acid, 1.2mmol oleyl ammonia mixed under nitrogen protection and reheated to 200 oC and leave it on for 1 hour. The reaction liquid obtained after cooling to room temperature is the shee...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a new method for the induced synthesis of nano-crystals with the morphology, the dimension and the assembling behavior being controllable through using an inorganic complex of Sn (IV). The method comprises the following steps: reacting an Sn (IV) salt which is a raw material with an excess pure dodecyl mercaptan or selenium solution to generate an Sn (IV) complex, and adopting the solution of the Sn (IV) complex as a reaction precursor to synthesize the nano-crystals with the morphology, the dimension and the assembling behavior being controllable. The method has the advantages of cheap and easily-available raw material, and simple experiment operation. For example, Cu2S and Cu2-xSe nano-crystals obtained through taking Cu2S and Cu2-xSe as raw materials are hexagonal sheets, and the hexagonal sheets can be assembled in a large area manner to form one-dimensional to three-dimensional cylindrical structures. The introduction of the inorganic complex enables the electrical conductivity of the synthesized semiconductor nano-crystals to be greatly improved. The method has very values in the laboratory research field or industrial application field based on the above characteristics.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, and relates to a new method for inducing and synthesizing nanocrystals with controllable appearance, size and assembly behavior by Sn(IV) inorganic complexes. The raw materials used in the method are cheap and easy to obtain, and the experimental operation is simple. Take Cu 2 S, Cu 2-x Taking Se as an example, the synthesized Cu 2 S and Cu 2-x Se nanocrystals have a large-area one-dimensional to three-dimensional assembly structure, and their electrical conductivity and other physical parameters are greatly improved compared with those induced by complexes. Therefore, the present invention has high value both in laboratory research and in industrial application. Background technique [0002] Due to their special physical and chemical properties, such as quantum size effect, dielectric confinement effect and surface effect, semiconductor nanoparticles have broad application prospects i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B19/04C01G3/12B82Y30/00B82Y40/00
Inventor 李林松李晓民申怀彬
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap