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Separation method for obtaining plenty of high-purity semiconductor single-walled carbon nanotubes

A single-walled carbon nanotube and semiconducting technology, which is applied in the field of separation of metallic and semiconducting single-walled carbon nanotubes, achieves the effect of simple operation, low cost, and good industrial application prospects

Inactive Publication Date: 2013-03-13
FUDAN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

[0007] The object of the present invention is to provide a kind of separation method that can obtain a large amount of high-purity semiconductive single-walled carbon nanotubes, to overcome various shortcoming and deficiency in the existing separation method

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  • Separation method for obtaining plenty of high-purity semiconductor single-walled carbon nanotubes
  • Separation method for obtaining plenty of high-purity semiconductor single-walled carbon nanotubes
  • Separation method for obtaining plenty of high-purity semiconductor single-walled carbon nanotubes

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Embodiment Construction

[0024] The specific preparation process is as follows:

[0025] First, the preparation of single-walled carbon nanotube dispersion.

[0026] Add 0.1g arc-SWNT to 500ml of 0.2% SDS aqueous solution, mix thoroughly to form a SWNTs solution with a concentration of 0.2mg / ml, sonicate it with an ultrasonic cell disruptor at 100w for 10 hours, and put it into a centrifuge tube After ultracentrifugation at a centrifugal force of 15000g and a temperature of 15°C for 2h, the supernatant was taken to obtain a SWCNTs / SDS dispersion.

[0027] Second, the preparation of TB buffer.

[0028] 6.1g of tris(hydroxymethyl)aminomethane and 3.0g of boric acid were added to 1L of 0.2% SDS aqueous solution and mixed thoroughly and stirred evenly to obtain a colorless and transparent TB buffer.

[0029] Third, separation by agarose gel electrophoresis.

[0030] Take 1g of agarose and add it to 100ml of TB buffer, mix it thoroughly, microwave heating to dissolve, prepare a uniform transparent solution with agar...

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Abstract

The invention belongs to the technical field of carbon nanotubes, and particularly discloses a separation method for obtaining plenty of high-purity semiconductor single-walled carbon nanotubes. The method comprises the following steps of: evenly mixing a right amount of single-walled carbon nanotubes with lauryl sodium sulfate, ultrasonically centrifuging to obtain carbon tubes which independently suspend in a water solution, causing relatively large difference between metal and semiconductor carbon tubes and sepharose gel by utilizing different surfactant molecule adsorption capacities of the metal and semiconductor carbon tubes, and adjusting the voltage and electrophoresis time of an external electric field to realize the massive gathering of semiconductor carbon tubes. The method has the advantage of obtaining the semiconductor sing-walled carbon nanotubes with purity higher than 99% without damaging the structures of the carbon tubes. The method has the characteristics of simplicity and easiness in operation, high purity, low cost, controllability, good repeatability, easiness in amplification and the like, is capable of realizing large-scale production and has favorable industrial application prospect.

Description

Technical field [0001] The invention belongs to the technical field of carbon nanotubes, and specifically relates to a method for separating metallic and semiconducting single-walled carbon nanotubes. Background technique [0002] Since 1993 S. Iijima of NEC Institute of Basic Research and D. Bethune of IBM Corporation mixed Fe and Co in graphite electrodes respectively, and independently synthesized single-walled carbon nanotubes (SWNT), SWNT with its unique structure, Special electrical properties, excellent optics, thermodynamics and other properties have quickly become research hotspots in various fields, showing good application prospects in optoelectronic devices, sensors, and hydrogen storage materials. [0003] Theoretically, SWNT can be regarded as a seamless hollow cylinder formed by curling a single graphene sheet according to a certain crystallographic vector direction. Due to the different curling vector, SWNT exhibits different structures and properties. The electron...

Claims

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Application Information

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IPC IPC(8): C01B31/02B82Y40/00C01B32/159
Inventor 张玲莉汪伟志
Owner FUDAN UNIV
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