Double-conduction semiconductor component and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as poor withstand voltage capability and increased manufacturing cost, achieve improved withstand voltage capability, and reduce the size of double-conduction semiconductor components Effect
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[0042] Please refer to figure 2 , figure 2 It is a schematic top view of a double conduction semiconductor device according to a preferred embodiment of the present invention. like figure 2 As shown, the double conduction semiconductor device 100 includes a semiconductor substrate 102, a first gate metal layer 104, a second gate metal layer 106, a first source metal layer 108 and a second source metal layer 110 . The first gate metal layer 104 , the first source metal layer 108 , the second source metal layer 110 and the second gate metal layer 106 are disposed on the semiconductor substrate 102 and arranged in sequence along a first direction 112 . The first gate metal layer 104 and the first source metal layer 108 are used to electrically connect the gate and the source of a first MOSFET in the dual-conduction semiconductor device 100 to the outside respectively, and the second The two gate metal layers 106 and the second source metal layer 110 are used to electricall...
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