Giant magneto-impedance effect biosensor preparation method for serum tumor marker detection
A technology of tumor markers and biosensors, applied in the field of giant magneto-impedance effect biosensors, can solve the problems of unrealized cell sample labeling and typing detection, low sensitivity of single indicators, lack of flexibility, etc., and achieve no special environment and storage requirements, fast detection speed, and high detection sensitivity
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Embodiment 1
[0050] The whole preparation process is divided into the following steps:
[0051] (1) The giant magneto-impedance effect sensor (referred to as GMI sensor) is composed of NiFe / Cu / NiFe multilayer film on a glass substrate. The shape is a zigzag structure with 3 turns and a distance between turns of 60 μm. The width of the Cu film is smaller than that of the NiFe film, the NiFe film has a width of 160 μm and a thickness of 6 μm, and the Cu film has a width of 140 μm and a thickness of 6 μm. The GMI sensor is produced by MEMS technology, and the specific production can be realized by using the existing technology, such as the method described in the patent No. ZL200510026607.8, which will not be repeated here.
[0052] (2) An insulating layer of Al2O3 is fabricated on the GMI sensor by a sputtering process, and its thickness is 0.5 μm. Throw away the photoresist, dry, expose, develop, etch Al2O3, and remove the glue, so that the sensor pins are exposed to the outside.
[0053]...
Embodiment 2
[0071] (1) The giant magneto-impedance effect sensor of the present invention consists of a NiFe / Cu / NiFe multilayer film positioned on a glass substrate, and its shape is a zigzag structure with 5 turns and a distance between turns of 60 μm. The width of the Cu film is smaller than that of the NiFe thin film, the NiFe thin film has a width of 140 μm and a thickness of 4 μm, and the Cu film has a width of 120 μm and a thickness of 4 μm. The GMI sensor is manufactured by MEMS technology. The detailed description of the manufacture can refer to the patent that has been applied for. The patent number is 200510026607.8, and will not be repeated here.
[0072] (2) Sputtering is used to make an insulating layer of Al2O3 on the GMI sensor, with a thickness of 0.7 μm. Throw away the photoresist, dry, expose, develop, etch Al2O3, and remove the glue, so that the sensor pins are exposed to the outside.
[0073] (3) A Cr / Au thin film is sputtered to a thickness of 500 nm. Throw photores...
Embodiment 3
[0091] (1) The giant magneto-impedance effect sensor of the present invention is made of NiFe / Cu / NiFe multilayer film positioned on a glass substrate, and its shape is a zigzag structure with 10 turns and a distance between turns of 60 μm. The width of the Cu film is smaller than that of the NiFe thin film, the NiFe thin film has a width of 120 μm and a thickness of 2 μm, and the Cu film has a width of 100 μm and a thickness of 2 μm. The GMI sensor is manufactured by MEMS technology. The detailed description of the manufacture can refer to the patent that has been applied for. The patent number is 200510026607.8, and will not be repeated here.
[0092] (2) An insulating layer of Al2O3 is fabricated on the GMI sensor by a sputtering process, and its thickness is 1 μm. Throw away the photoresist, dry, expose, develop, etch Al2O3, and remove the glue, so that the sensor pins are exposed to the outside.
[0093] (3) A Cr / Au thin film is sputtered to a thickness of 100 nm. Throw ...
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