Method for extracting ion-implanted region trap concentration data of infrared focal plane detector

Abstract

The invention discloses a method for extracting ion-implanted region trap concentration data of an infrared focal plane detector. The method comprises the following steps of: performing one-dimensional linear scanning on a pn junction photosensitive element array based on the principle that a photon-generated carrier is generated on a tellurium-cadmium-mercury material through laser irradiation, diffused to a pn junction formed among an ion-implanted n region, a mercury interstitial diffusion region and a p absorption region and separated by a junction electric field so as to form a photocurrent signal, and obtaining a relation curve between the current and position under different temperature conditions, wherein the curve has two pairs of photocurrent peaks, and the distance between peaks of the curve refers to the junction region width of a photosensitive element and the position of the pn junction; and combining numerical simulation, and extracting and obtaining the effective trap concentration of the ion-implanted region at different temperatures. The method has significance for judging the quality of materials in the ion-implanted region of a long-wave tellurium-cadmium-mercury infrared detector.

Description

technical field [0001] The invention relates to a detection technology of characteristic parameters of an infrared detector, in particular to a method for extracting trap concentration data in an ion implantation area of ​​a mercury cadmium telluride infrared focal plane detector photosensitive chip array. Background technique [0002] HgCdTe infrared detectors have important application value in the fields of military reconnaissance and aerospace remote sensing, and have high requirements on device performance. Planar HgCdTe infrared detectors generally use ion implantation to form the n-region, but ion implantation will cause a large amount of damage to the HgCdTe n-region, forming traps in the photosensitive element region of the device. The traps can not only form dark current in the way of trap-assisted tunneling, but also form recombination centers to recombine photogenerated carriers, which greatly reduces the quantum efficiency of devices and detectors. Obtaining ac...

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However, the differential Hall test is destructive, a single electrical test, and is susceptible to insufficient sampling numbers and complicated experimental sample preparation.

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