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Next-door thermal coupling distillation method and equipment for producing polycrystalline silicon

A next-wall rectification tower and thermal coupling technology, applied in the field of rectification, can solve the problems of large equipment investment and low purification efficiency, and achieve the effects of reducing energy consumption, matching heat exchange, and reducing equipment investment.

Inactive Publication Date: 2013-02-13
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although differential pressure coupling technology is used to reduce production energy consumption, multi-tower continuous distillation has low purification efficiency and large equipment investment

Method used

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  • Next-door thermal coupling distillation method and equipment for producing polycrystalline silicon
  • Next-door thermal coupling distillation method and equipment for producing polycrystalline silicon
  • Next-door thermal coupling distillation method and equipment for producing polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] For the purification of 80,000 tons / year of trichlorosilane, the feed composition is as follows:

[0024] Crude trichlorosilane feed composition: 0.5% dichlorodihydrosilane; 99% trichlorosilane; 0.5% silicon tetrachloride. The feed flow rate is 10 tons / hour.

[0025] The pressure at the top of the low-pressure dividing wall rectification column is 280kPa, the temperature at the top of the column is 45°C, and the reflux / feed rate (L / F)=13.6.

[0026] The pressure at the top of the medium-pressure dividing wall rectification column is 480kPa, the temperature at the top of the column is 85.4°C, and the reflux / feed rate (L / F)=16.8.

[0027] The pressure at the top of the high-pressure dividing wall rectification column is 800kPa, the temperature at the top of the column is 107.9°C, and the reflux / feed rate (L / F)=20.

[0028] The load of each tower in the trichlorosilane purification process is shown in the following table (Table 1). Since the rectification process adopts ...

Embodiment 2

[0033] The purification of 80000 tons / year trichlorosilane, operating conditions are the same as embodiment 1, different conditions are as follows:

[0034] Crude trichlorosilane feed composition: boron trichloride 0.1%; dichlorodihydrosilane 0.5%; trichlorosilane 97.7%; silicon tetrachloride 0.5%; Phosphorus 0.1%. The feed flow rate is 10 tons / hour.

[0035] The pressure at the top of the low-pressure dividing wall rectification column is 270kPa, the temperature at the top of the column is 45.0°C, and the reflux / feed amount (L / F)=13.7.

[0036] The pressure at the top of the medium-pressure dividing wall rectification column is 500kPa, the temperature at the top of the column is 87.1°C, and the reflux / feed rate (L / F)=16.9.

[0037] The pressure at the top of the high-pressure dividing wall rectification column is 800kPa, the temperature at the top of the column is 107.9°C, and the reflux / feed rate (L / F)=20.

[0038] The load of each tower in the trichlorosilane purificatio...

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Abstract

The invention relates to a next-door thermal coupling distillation method and equipment for producing polycrystalline silicon. The equipment comprises a low-pressure next-door rectifying tower, a medium-pressure next-door rectifying tower, a high-pressure next-door rectifying tower, a top tower condenser and a tower kettle reboiler, condensation reboilers are arranged between the two rectifying towers, rear tower top gas phase materials release heat in the condensation reboilers and are condensed into cold fluids to return to a rear tower, and front tower kettle materials absorb heat in the condensation reboilers and return to a front tower after becoming reboiling vapor. Coarse trichlorosilane materials are separated though the three next-door rectifying towers successively, low-boiling-point substances are removed at tower tops, high-boiling-point substances are removed at tower bottoms, and high-purity trichlorosilane products are extracted on the lateral line of the high-pressure tower finally. Compared with traditional distillation processes, a next-door distillation technology and a differential-pressure thermal coupling technology can decrease energy consumption and equipment investment. The next-door thermal coupling distillation method and equipment for producing polycrystalline silicon utilizes the next-door distillation technology and the differential-pressure thermal coupling technology simultaneously, the production cost and the energy consumption are decreased greatly, and distillation energy is saved by about 70%.

Description

technical field [0001] The invention relates to the technical field of rectification, and uses high-efficiency and energy-saving partition rectification technology and differential pressure thermal coupling technology to purify trichlorosilane, and particularly proposes a partition thermal coupling rectification method and equipment for polysilicon production. Background technique [0002] Polysilicon material is the most important basic material for the electronic information industry and solar photovoltaic power generation industry. Solar-grade polysilicon can be used for solar photovoltaic power generation. It is an efficient, environmentally friendly and clean future technology that can replace the existing power generation mode. Electronic-grade polysilicon can be used to manufacture semiconductor materials, used in the manufacture of integrated circuit substrates, and widely used in aerospace, artificial intelligence, automatic control and computer chips and other field...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
CPCY02P20/10
Inventor 黄国强孙帅帅王红星王国锋
Owner TIANJIN UNIV
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