Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device for selective etching of quartz wafers

A quartz wafer, selective technology, applied in the direction of crystal growth, impedance network, electrical components, etc., can solve the problems of complex process and high processing cost, and achieve the effect of simple operation, short processing process and deep corrosion

Active Publication Date: 2016-06-08
铜陵晶越电子股份有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The advantage of this method is that the corrosion depth is controllable, but the disadvantage is that the process is very complicated and the processing cost is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for selective etching of quartz wafers
  • Device for selective etching of quartz wafers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Depend on figure 1 with figure 2 As shown, the device for selectively corroding quartz wafers of the present invention includes upper and lower splints 1, 2 made of corrosion-resistant materials. The area has a plane area that cooperates with each other, and the plane area on the lower end surface of the upper clamping plate 1 and the upper end surface of the lower clamping plate 2 respectively has several upper and lower mold cavities 13, 23 that are matched with the crystal square and whose height is half the thickness of the crystal square. . In this example, four upper and lower mold cavities 13, 23 are respectively arranged on the upper and lower splints 1, 2, and each mold cavity can place a crystal square.

[0014] The upper and lower splints 1, 2 are respectively opened with four corrosion holes 11, 21 communicating with the areas to be etched at the upper and lower ends of the crystal square. The processed crystal square in this example is a rectangular she...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a device of selectively corroding a quartz wafer. The device comprises upper and lower clamp plates made of a corrosion resistant material, wherein the lower end face of the upper clamp plate and the upper end face of the lower clamp plate are provided with plan regions which are mutually matched, and the plan region of the upper end face of the lower clamp plate is provided with a plurality of die cavities matched with crystal square pieces; and the upper and lower clamp plates are respectively provided with corrosion holes communicated with regions to be corroded of the upper and lower ends of the crystal square pieces, and the shapes of the corrosion holes and the shapes of the regions to be corroded of the crystal square pieces are same. The device is simple in structure and convenient in assembly; the device meets quartz wafer deep corrosion requirements, has the advantages of short processing procedure and simplicity in operation compared with an exposure mask method, and can be used for greatly lowering the wafer processing cost.

Description

technical field [0001] The invention relates to a processing device for a quartz wafer, in particular to a device for selectively corroding a quartz wafer. Background technique [0002] The etching process in the existing quartz wafer manufacturing process is the last process in the wafer manufacturing process. The role of corrosion is to remove the damaged layer of the wafer due to grinding and reduce the equivalent series impedance of the quartz crystal resonator. Therefore, the thickness of the corrosion is generally only a few microns, and the corrosion time is short. The entire wafer surface must be corroded. Therefore, only The wafer needs to be placed in the basket and shaken to ensure that the wafer is fully dispersed. In the etch-back process, the effect of etching is equivalent to grinding, and the thickness of etching needs to be at least tens of microns according to the target frequency, and what needs to be etched is the oscillating part of the wafer, which is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/04C30B33/10
Inventor 唐劲张帮岭
Owner 铜陵晶越电子股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products