Novel three-junction thin-film solar cell and production method thereof

Abstract

The invention discloses a novel three-junction thin-film solar cell, which comprises a glass substrate, a back electrode molybdenum layer, a multi-junction cell unit, a window layer and a reflection reducing layer arranged in sequence from bottom to top. The reflection reducing layer is provided with a gate electrode; the multi-junction cell unit consists of the following cell layers arranged in sequence from bottom to top: a P-type selenium-indium-copper layer, an N-type cadmium sulfide layer, a first P-type amorphous silicon layer, an intrinsic amorphous germanium-silicon layer, a first N-type amorphous silicon layer, a second P-type amorphous silicon layer, an intrinsic amorphous silicon layer and a second N-type amorphous silicon layer. The invention also discloses a production method of the novel three-junction thin-film solar cell, and the cell layers are manufactured respectively by magnetron sputtering, vacuum selenide annealing or vacuum evaporation. The characteristics of an a-Si / a-SiGe solar cell technology and a CuInSe2 thin-film solar cell are combined by the solar cell, the scope of the wavelength of solar light to be absorbed can be expanded to 500-1100nm, the rate of photoelectric conversion can be increased to 20 percent, and the manufacturing cost is low.

Description

technical field [0001] The invention relates to a solar cell and a production method thereof, in particular to a novel triple-junction thin-film solar cell and a production method thereof. Background technique [0002] Silicon (chemical symbol: Si)-based thin-film solar cells have the highest degree of industrialization among all thin-film solar cells due to their high solar absorption coefficient, small temperature coefficient of cell efficiency, low production cost, and suitable for large-scale large-scale production. , The actual production scale of the largest thin-film solar cells. The development of silicon-based thin-film solar cells is from single-junction amorphous silicon (ie a-Si) to double-junction amorphous silicon-amorphous silicon germanium (ie a-Si / a-SiGe). Due to the light-induced attenuation effect of amorphous silicon, its photoelectric conversion rate is generally only 8%. The optical bandgap of amorphous silicon-amorphous germanium silicon is between 1...

AI Technical Summary

Problems solved by technology

The thin-film solar cell of this patent application adopts the structure of a-Si / PZT / ITO, which has high short-circuit current and photoelectric conversion efficiency, but it is based on the thin-film solar cell of PZT / ITO structure, and only adds amorphous Silicon layer, still has the above-mentioned defects of traditional thin-film solar cells

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