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Method for growing carbon film or inorganic material film on substrate

A material film and carbon film technology, which is applied in the field of direct growth of high-quality and wafer-sized graphene layers, which can solve problems such as difficulty in controlling thin-layer graphene and inability to form high-quality graphene.

Active Publication Date: 2013-01-02
ACAD SINIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, nickel metal is not easy to control to reach thin-layer graphene, and if the catalytic conversion temperature is lower than 800 °C, it will not be able to form high-quality graphene with good graphitization

Method used

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  • Method for growing carbon film or inorganic material film on substrate
  • Method for growing carbon film or inorganic material film on substrate
  • Method for growing carbon film or inorganic material film on substrate

Examples

Experimental program
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Embodiment 1

[0058] The known quartz tubular furnace is adjusted to a device suitable for synthesizing the underlying graphene layer, and the graphene layer is directly grown on the insulating substrate in the following manner:

[0059] A 300nm copper film is deposited on an insulating substrate, and then the insulating substrate is placed in the aforementioned quartz tube furnace. Then, methane is used as a carbon source, in a hydrogen atmosphere and at a pressure of 500 Torr, The insulating substrate was heated to 750°C, and then thermally annealed at the same temperature for 25 minutes. In a pure hydrogen environment (H 2 : 15 sccm; Pressure: 800 mTorr), and heat the furnace to 900°C. When the temperature reaches 900℃, the gas condition is changed to methane / hydrogen mixture (CH 4 =75sccm and H 2 = 15sccm) and under a pressure of 800 millitorr (mTorr) for 5 minutes. In the cooling stage, the furnace is cooled to room temperature at a rate of about 20° C. / min, while maintaining the same ga...

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Abstract

The invention discloses a method for growing a carbon film or an inorganic material film on a substrate. The method enables a high-quality and wafer-specification film layer (such as a graphene layer) to be directly grown on the substrate without an extra transfer process.

Description

Technical field [0001] This application relates to a method of growing a carbon film or an inorganic material film on a substrate, especially a method of directly growing a graphene layer of high quality and wafer size on the substrate. Background technique [0002] Graphene (graphene) is a single atomic layer of graphite, due to its two-dimensional structure and unique physical properties, for example, its carrier mobility can reach 200,000 cm 2 / V.s, and has excellent mechanical strength and thermal conductivity, which is interesting. Graphene is suitable for high-speed, high-performance electronic devices. [0003] So far, many methods for synthesizing graphene have been proposed, including: (1) mechanical exfoliation of graphite, (2) epitaxial growth method, (3) chemical vapor deposition method: on catalytic metals (for example: copper, nickel, iron Etc.), (4) chemical exfoliation method: using graphite oxide to obtain graphene oxide (CVD), and (5) other chemical exfoliation m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C04B41/50C01B31/04
CPCH01L21/02527H01L21/02612C01B31/04H01L21/0262H01L21/0242C01B31/0446C03C17/22H01L21/02422C04B41/50B82Y30/00B82Y40/00C01B32/184H01L21/02381H01L21/02444H01L21/02488H01L21/02502
Inventor 李连忠苏清源卢昂佑吴至彧刘耕谷
Owner ACAD SINIC
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