Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and device for calculating chemical mechanical polishing material removal rate

A grinding removal rate, chemical mechanical technology, applied in the direction of calculation, instrumentation, electrical digital data processing, etc., can solve problems that remain in the stage of empirical demonstration and complexity

Active Publication Date: 2012-11-28
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF2 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, due to the extremely complicated process of chemical mechanical polishing, the process control of CMP is still in the empirical demonstration stage. It is difficult to reveal the interaction law between the grinding components and obtain an accurate and reasonable grinding removal rate formula by using only one model or method. Some analyzes of various chemical factors generally only explain and explain the experimentally measured data qualitatively or semi-quantitatively to a certain extent. Therefore, only various process parameters of CMP, contact forms between grinding interfaces and grinding In-depth analysis of the fluid state of the liquid can fully reveal the grinding mechanism of CMP and continuously meet the needs of the rapidly developing integrated circuit manufacturing process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for calculating chemical mechanical polishing material removal rate
  • Method and device for calculating chemical mechanical polishing material removal rate
  • Method and device for calculating chemical mechanical polishing material removal rate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Based on above-mentioned purpose, the present invention proposes a kind of method of chemical mechanical grinding removal rate calculation, comprises the following steps:

[0034] Determine the grinding removal rate calculation formula MRR=kPV, wherein, V is the relative slip rate between the chip and the polishing pad, P is the external pressure applied to the chip surface, and k is the Preston coefficient;

[0035] Analyze the factors that affect the grinding removal rate, and obtain the functional equation that affects the described factors of the grinding removal rate;

[0036] Substituting the functional equation of the above factors into MRR=kPV, the specific calculation formula of the grinding removal rate is obtained, and the grinding removal rate MRR is calculated according to the specific calculation formula.

[0037] like figure 1 As shown, it is a flow chart of the method for calculating the chemical mechanical grinding removal rate of the embodiment of the...

Embodiment 2

[0071] Corresponding to the above calculation method, such as Figure 5 As shown, the embodiment of the present invention also proposes a chemical mechanical polishing removal rate calculation device 500 , including a selection module 510 , an analysis module 520 and a calculation module 530 .

[0072] Specifically, the selection module 510 is used to select the grinding removal rate calculation formula MRR=kPV, wherein V is the relative sliding velocity between the chip and the polishing pad, P is the external pressure applied to the chip surface, and k is the Preston coefficient.

[0073] The analysis module 520 is used to analyze the factors affecting the grinding removal rate, and obtain the function equation of the factors affecting the grinding removal rate.

[0074] The factors analyzed by the analysis module 520 include one or more of the following:

[0075] The number of effective grinding particles in the grinding liquid, the removal volume of single particles, the ...

Embodiment 3

[0091] In order to further explain the present invention and the specific application based on the above method or equipment, a specific application case is given below, a method for obtaining chemical mechanical grinding surface grinding conditions, the flow chart is as follows Image 6 As shown, for example, the specific operation plan is as follows:

[0092] Step 1: Consider the factors that have an impact on the process configuration among the factors affecting the grinding removal rate, and adjust The process configuration of the whole chemical mechanical grinding

[0093] The influencing factors of the grinding removal rate are as mentioned above, including the number of effective grinding particles in the grinding liquid, the volume of single particles removed, the parameters of the grinding process, the mass transfer rate of the grinding removal on the chip surface, the pH value of the grinding liquid and the temperature.

[0094] This step specifically includes: ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for calculating chemical mechanical polishing material removal rate. The method comprises the following steps: determining a calculation formula MRR=kPV of the material removal rate; analyzing a factor which affects the material removal rate, and obtaining a function equation of the factor which affects the material removal rate; and substituting the function equation of the factor into the MRR=kPV, obtaining a specific calculation formula of the material removal rate, and calculating the material removal rate MRR according to the specific calculation formula. Besides, the invention further provides a device for calculating the chemical mechanical polishing material removal rate. According to the schemes provided by the invention, the action rule among multiple bodies is deeply revealed by the analyzing of the factor which affects the material removal rate and the comprehensive considering of an interaction relationship among four bodies including wafers, particles, polishing pads and polishing fluids, the actual process of chemical mechanical polishing can be relatively objectively and truly described, and the method for calculating the chemical mechanical polishing material removal rate has active guiding functions on the mechanism analysis and the layout design of the CMP (Chemical Mechanical Polishing), as well as the research and the development of a large production line process.

Description

technical field [0001] The invention relates to the technical field of CMP manufacturing process and CMP modeling, in particular, the invention relates to a method and equipment for calculating chemical mechanical grinding removal rate. Background technique [0002] Chemical Mechanical Polishing (CMP, Chemical Mechanical Polishing), as a key link in the manufacturability design process solution, is currently the only ultra-fine processing technology that can achieve global planarization in VLSI manufacturing, and has been widely used in integrated circuit chips , micro-mechanical systems and other surface planarization. [0003] High-k gate dielectric and metal gate technologies (HKMG, High-k Metal Gate) enable Moore's Law to continue at the 45 / 32nm node. The current HKMG process has two mainstream integration schemes, namely "gate first" and "gate last". "Gate last" is also called replaceable gate (hereinafter referred to as RMG). When using this process, the high-permitt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F19/00
Inventor 徐勤志陈岚
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com