Method of cutting wafer used for preparation of sensor chip into grains

Abstract

The invention provides a method of cutting wafer used for preparation of a sensor chip into grains, and the method belongs to the technical field of semiconductor chip packaging. The method comprises the steps as follows: (1) a wafer after a latter process is completed and before packaging is prepared is provided; (2) a protective film is pasted on the front of the wafer; (3) the back of the wafer is ground to realize reduction of thickness; (4) a scribing film is pasted on the back of the wafer; (5) the protective film is torn off under a condition above the room temperature; (6) the wafer is scribed and cut; and (7) the grains on the surface of the wafer are cleaned and blown dry. The method has the characteristic that the yield of the cut grains is high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor chip packaging, and relates to a method for cutting wafers (wafers) into dies (die), in particular to a method for cutting wafers used for preparing sensor chips. Background technique [0002] The semiconductor chip manufacturing process includes wafer (wafer) preparation process and packaging process. Generally, the wafer preparation process is completed in the wafer factory, and the packaging process is completed in the packaging and testing plant. The wafers completed in the fab have generally completed various back-end processes and related testing work. In the process of packaging, firstly, the wafer needs to be cut into individual grains with independent circuit functions, so as to further package the grains into chips. [0003] figure 1 Shown is a prior art method of dicing a wafer into dies. The existing cutting method process mainly includes the following steps: [0004] S110, p...

AI Technical Summary

Problems solved by technology

The thickness of the sensing film 13 is usually 10-50 microns. Compared with the silicon-based substrate, the mechanical strength of the sensing film 13 is very low because the thickness is too thin and there is a hollow cavity 15 underneath it.

if used figure 1 The dicing process shown cuts the wafer of sensor chips into figure 2 For the die shown, the sensing film on the wafer will be damaged due to various mechanical contacts during the dicing process, which will cause the bonding surface of the die to be contaminated, which is extremely detrimental to the yield of the package

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