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Diffusion technology for phosphorus slurry of selective emitter crystalline silicon solar cell

A solar cell and diffusion process technology, applied in the field of solar cells, can solve the problems of affecting the photoelectric conversion efficiency of the cell, unable to achieve the selective diffusion effect, etc., and achieve the effects of improving the photoelectric conversion efficiency, improving the filling factor, and improving the short-wave response.

Active Publication Date: 2012-10-17
JIANGXI UNIEX NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the use of printing phosphorous paste pattern and then diffusion has become the choice of many manufacturers for the development of selective emitter crystalline silicon solar cells, but in practical applications, the direct use of the previous diffusion process cannot achieve a good selective diffusion effect, thus affecting the battery. photoelectric conversion efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A phosphorous slurry diffusion process for selective emitter crystalline silicon solar cells, the specific steps are as follows:

[0024] 1. Use P-type polysilicon wafers with a resistivity of 1ohm.cm and a specification of 156mm╳156mm. After conventional acid texturing, print phosphorous slurry graphics and dry them;

[0025] 2. Preparatory stage: 2 slm of large nitrogen is introduced into the Dutch TEMPRESS diffusion furnace;

[0026] 3. The stage of entering the boat: push the polysilicon wafer into the TEMPRESS diffusion furnace in the Netherlands, and inject 5 slm of nitrogen into the furnace for 8 minutes;

[0027] 4. Pulping stage: 5 slm of large nitrogen is introduced into the furnace, and the duration is 8 minutes;

[0028] 5. Leak detection stage: 2 slm of large nitrogen is introduced into the furnace for 1 minute, and the temperatures in the 5 sections of the furnace are 841°C, 841°C, 838°C, 836°C, and 834°C;

[0029] 6. Heating stage: 21slm of large nitrog...

Embodiment 2

[0039] A phosphorous slurry diffusion process for selective emitter crystalline silicon solar cells, the specific steps are as follows:

[0040] 1. Use P-type polysilicon wafers with a resistivity of 2ohm.cm and a specification of 156mm╳156mm. After conventional acid texturing, print phosphorous slurry graphics and dry them;

[0041] 2. Preparatory stage: 2 slm of large nitrogen is introduced into the Dutch TEMPRESS diffusion furnace;

[0042] 3. The stage of entering the boat: push the polysilicon wafer into the TEMPRESS diffusion furnace in the Netherlands, and inject 5 slm of nitrogen into the furnace for 8 minutes;

[0043] 4. Pulping stage: 5 slm of large nitrogen is introduced into the furnace, and the duration is 8 minutes;

[0044] 5. Leak detection stage: 2 slm of large nitrogen is introduced into the furnace for 1 minute, and the temperatures in the 5 sections of the furnace are 841°C, 841°C, 838°C, 836°C, and 834°C;

[0045] 6. Heating stage: 21slm of large nitrog...

Embodiment 3

[0055] A phosphorous slurry diffusion process for selective emitter crystalline silicon solar cells, the specific steps are as follows:

[0056] 1. Use P-type polysilicon wafers with a resistivity of 3ohm.cm and a specification of 156mm╳156mm. After conventional acid texturing, print phosphorous slurry graphics and dry them;

[0057] 2. Preparatory stage: 2 slm of large nitrogen is introduced into the Dutch TEMPRESS diffusion furnace;

[0058] 3. The stage of entering the boat: push the polysilicon wafer into the TEMPRESS diffusion furnace in the Netherlands, and inject 5 slm of nitrogen into the furnace for 8 minutes;

[0059] 4. Pulping stage: 5 slm of large nitrogen is introduced into the furnace, and the duration is 8 minutes;

[0060] 5. Leak detection stage: 2 slm of large nitrogen is introduced into the furnace for 1 minute, and the temperatures in the 5 sections of the furnace are 841°C, 841°C, 838°C, 836°C, and 834°C;

[0061] 6. Heating stage: 21slm of large nitrog...

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Abstract

The invention relates to a diffusion technology for phosphorus slurry of a selective emitter crystalline silicon solar cell. According to the invention, relevant parameters of diffusion processing steps are adjusted, and a proper diffusion manner for phosphorus slurry of a selective emitter crystalline silicon solar cell is found out, so obvious heavily-doped zones and slightly-doped zones are generated, which enables short wave response of light to be enhanced and short-circuit current, open-circuit voltage and fill factors to be well improved, thereby improving photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a diffusion method suitable for selective emitter crystalline silicon solar cells. Background technique [0002] In the field of solar cells, the so-called selective emitter crystalline silicon solar cells are heavily doped at the contact part between the metal grid line (electrode) and the silicon wafer, and lightly doped at the part between the electrodes. This structure can reduce the recombination of the diffusion layer, thereby improving the short-wave response of light, and at the same time can reduce the contact resistance between the front metal electrode and silicon, so that the short-circuit current, open-circuit voltage and fill factor are better improved, thereby improving Photoelectric conversion efficiency. [0003] For selective emitter crystalline silicon solar cells, it is the key point of the process to obtain heavily doped regions and shallowly doped reg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/02H01L31/18
CPCY02P70/50
Inventor 梅超黄治国王鹏刘颖丹杨丽琼柳杉包兵兵
Owner JIANGXI UNIEX NEW ENERGY CO LTD
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