Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large-area contact type machining device for fused quartz by plasma discharge machining

A plasma and electrical discharge machining technology, used in manufacturing tools, glass manufacturing equipment, glass molding, etc., can solve the problems of low reactive ion activity, short processing time, high electrode temperature, and achieve high removal efficiency, good processing effect, The effect of reducing the electrode temperature

Active Publication Date: 2012-10-17
HARBIN INST OF TECH
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of high electrode temperature and short processing time in the existing plasma processing process, resulting in relatively low activity of reactive ions and low removal rate, and to provide a large-area contact plasma discharge processing melting Quartz processing device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-area contact type machining device for fused quartz by plasma discharge machining
  • Large-area contact type machining device for fused quartz by plasma discharge machining
  • Large-area contact type machining device for fused quartz by plasma discharge machining

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] Specific implementation mode 1. Combination Figure 1 ~ Figure 3 Describe this embodiment, the large-area contact plasma discharge machining fused silica processing device of this embodiment includes a radio frequency power supply 1, a high electrode 3, a forming electrode 4, an upper guide body 5, a lower guide body 6, a ground electrode 7, a wind guide Plate 8, end workpiece splint 9, gas mixing box 10, helium gas cylinder 11, carbon tetrafluoride gas cylinder 12, oxygen cylinder 13, helium gas flowmeter 14, carbon tetrafluoride flowmeter 15, oxygen flowmeter 16. Water pump 17, pin 22, two upper case covers 2, two side plates 18 and two air ducts 25, the ground electrode 7 is composed of an upper end plate 7-1 and a base plate 7-2, and the upper end plate 7-1 is The longitudinal centerline of the base plate 7-2 is arranged on the base plate 7-2, and the upper end plate 7-1 is integrated with the base plate 7-2, and the upper end surface of the base plate 7-2 is positi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a large-area contact type machining device for fused quartz by plasma discharge machining, relates to a plasma machining device, and aims at solving the problems of the relatively low activity and low removal rate of reaction ions due to a high electrode temperature and a short machining time during the present plasma machining process. According to the invention, the upper end surface of an air guide plate and the upper end surface of a workpiece clamping plate on an end part are located in the same horizontal plane; a moulding electrode is arranged above a workpiece groove; a discharge space between two electrodes is formed on the lower end surface of the moulding electrode and the upper end surface of the workpiece groove; a cavity between an upper flow guide body and a lower flow guide body is a gas guide cavity; gas inlet holes are formed on the end surfaces of the gas inlet ends of the upper flow guide body and the lower flow guide body, and the two gas inlet holes are communicated with a gas mixing box; a helium gas cylinder, a carbon tetrafluoride gas cylinder and an oxygen cylinder are connected with the gas mixing box via a helium flow meter, a tetrafluoride flow meter and an oxygen flow meter respectively; a water pump is connected with a lower cooling channel and an upper cooling channel; and a radiofrequency power supply is connected with a high electrode and a base plate. The large-area contact type machining device disclosed by the invention is used for plasma machining.

Description

technical field [0001] The invention relates to a plasma processing device under atmospheric pressure, in particular to a device for large-area plasma processing of fused quartz through a radio frequency power supply. Background technique [0002] Fused silica is an amorphous (glassy) state of silicon oxide and is a typical glass. It is mainly used in industries such as precision casting, glass ceramics, refractory materials and electronic appliances. With good uniformity and radiation resistance, it is widely used in high-energy laser windows, aerospace, microelectronics and other optical fields. Currently, large-area processing is less efficient due to the properties of fused silica combined with high demands on precision components. The processing methods for high-precision fused silica surfaces are divided into two categories, grinding and polishing. Grinding has high processing efficiency, but it usually causes damage to the surface and sub-surface metamorphic layers,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03B20/00
Inventor 王波金会良李娜姚英学赵玺
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com