Organic semiconductor device by using alkali metal rubidium compound as buffer layer or electron injection layer

Abstract

The invention belongs to the technical field of a semiconductor device, and particularly relates to an organic semiconductor device by using alkali metal rubidium compound as a buffer layer or an electron injection layer. The alkali metal rubidium compound adopts RbBr, Rb2CO3, Rb2SO4, RbOH, RbNO3, RbClO4, RbCl, RbI, RbF and the like. According to the organic semiconductor device by using the alkali metal rubidium compound as the buffer layer or the electron injection layer, disclosed by the invention, Rb compound is formed into a single cathode buffer layer or is together mixed with an organic material in the organic layer and the cathode of the semiconductor device, thus the electron injection and transmission of the organic semiconductor device can be effectively enhanced, and the performances of the organic semiconductor device can be increased further.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor devices, and in particular relates to an organic semiconductor device using an alkali metal rubidium compound as a cathode buffer layer material or an electron injection layer doping material. Background technique [0002] In organic semiconductor devices, because the electron injection barrier between the semiconductor material and the electrode is too large, it is difficult to inject electrons from the electrode into the semiconductor device in the semiconductor device, and the conductivity of the organic electron transport material is relatively low, so it is difficult to combine with Metal electrodes create ohmic contacts, which makes it difficult to improve the performance of organic semiconductor devices. [0003] Taking Organic Light-Emitting Device (OLED) as an example, OLED has become a popular technology due to its advantages of all solid state, active light emission, high ...

AI Technical Summary

Problems solved by technology

At present, Li and Cs compounds have been widely used as electrode buffer layers or N-type electrical dopant materials. Early Li compounds such as LiF were widely used, but due to the relatively small atomic size of Li, it is easy to diffuse into the light emission of organic light-emitting devices. The region affects the performance of the device, so compounds with larger atomic size such as Cs 2 CO 3 It was gradually applied later, but due to the high evaporation temperature of most Li and Cs compounds, such as LiF and Cs 2 CO 3 The vapor deposition temperature reaches above 600 degrees Celsius, too high vapor deposition temperature increases the process, and the high temperature process will have a negative impact on the device, which is not conducive to industrial production

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