LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof

Abstract

The invention discloses an LED (Light-Emitting Diode) packaging structure using a transparent oxide substrate, comprising a plane type transparent oxide substrate, a fluorescent thin film and more than one LED chip, wherein a conductive pattern is arranged on the front face of the transparent oxide substrate; an LED bonding region is reserved on the conductive pattern and the LED chips are arrayed on the LED bonding region; and the fluorescent thin film is packaged on the front face of the transparent oxide substrate to seal the LED chips between the transparent oxide substrate and the fluorescent thin film. According to the LED packaging structure using the transparent oxide substrate provided by the invention, a traditional structure for emitting light from one side is broken through, the light emitting efficiency is extremely improved, and the heat radiation capability is improved; the reliability and the consistency of a product are improved by a full-page packaging method, so that the LED packaging structure is suitable for industrial rapid and efficient production; and furthermore, isolating glue is avoided being used and the service life of the product can be prolonged effectively.

Description

technical field [0001] The invention relates to LED packaging technology, in particular to an LED sealing structure using a transparent oxide substrate and a sealing method thereof. Background technique [0002] With the continuous development of LED in the field of lighting, people have higher and higher requirements for its light extraction efficiency. LED packaging materials, packaging structures and packaging methods are all important factors affecting its light extraction efficiency; at present, it is mainly through transparent substrate technology. , metal film reflection technology, flip chip technology to improve the light efficiency of LED. [0003] Usually, blue light and green light LED chips grow GaN (gallium nitride)-based LED chip structure layers on sapphire substrates through MOCVD (metal organic compound chemical vapor deposition) technology, and the light emitted by the P / N junction light-emitting area passes through The upper P-type region is ejected; due...

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Problems solved by technology

In order to overcome the above shortcomings, a flip-chip LED chip is proposed, which is to solder the LED chip on the silicon substrate through flip-chip to improve the light output rate; The cost and difficulty of light distribution are not conducive to market promotion and application

[0004] In short, due to a series of problems such as opaque substrates and metal electrode layers, LED chips still can only emit light from one side, which limits the improvement of light emission efficiency and poor heat dissipation; at the same time, the traditional single-chip packaging has a low degree of automation and is not suitable for mass production. Production

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