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Large-area layering etching and transferring method of auxiliary metal silicon nanometer line array

A technology of silicon nanowire array and transfer method, which is applied in the direction of metal material coating process, coating, process for producing decorative surface effects, etc. Large diameter and other problems, to achieve the effect of full use

Inactive Publication Date: 2012-10-03
SUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the catalyst treatment method adopted is relatively complicated, and the diameter of the silicon wire is large, and the silicon wire is easy to fall off during the solution soaking process, which is not conducive to the transfer of the silicon nanowire array.

Method used

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  • Large-area layering etching and transferring method of auxiliary metal silicon nanometer line array
  • Large-area layering etching and transferring method of auxiliary metal silicon nanometer line array

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Embodiment Construction

[0025] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0026] see figure 1 Shown:

[0027] 1. Preparation materials:

[0028] Cut the whole piece of N-Si(100) resistivity of 1.5~2Ω·cm or N-Si(100) polished single crystal silicon wafer with resistivity of 0.01~0.008Ω·cm into an area of ​​about 1cm×1cm , then ultrasonically cleaned with acetone (10 min at room temperature), ultrasonically cleaned with alcohol (10 min at room temperature), cleaning solution V (H 2 o 2 ): V(H 2 SO 4 )=1:3 ultrasonic cleaning (10 min at room temperature), and finally clean the silicon wafer with deionized water for later use. Preparation of HF, AgN0 3 Concentrations are 4.6mol / L, 0.02mol / L solution and HF, H 2 o 2 Etching solutions with solubility of 4.6mol / L and 0.4mol / L respectively.

[0029] 2. Chemical plating of Ag nanoparticles catalyst:

[0030] Put the silicon wafer into HF, AgN0 3 Concen...

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Abstract

The invention discloses a large-area layering etching and transferring method of an auxiliary metal silicon nanometer line array. The method comprises the steps: carrying out heating treatment on an Si (silicon) sheet which is etched once by a wet process in air; partially fusing an Ag (silver) nanometer particle catalyst on the bottom part of the silicon nanometer line array; attaching a part of Ag nanometer particles to the lateral wall of the silicon nanometer line array; transversely etching the attached Ag nanometer particles in a re-etching process; carrying out secondary etching reaction on the silicon nanometer line array to generate a regular fault; and stripping off the silicon nanometer line array on the fault by an adhesive tape. The invention provides a layering etching and transferring method of the silicon nanometer line array for industrial production, so that full utilization of a body silicon substrate material and manufacture of a flexible silicon nanometer device can be achieved.

Description

[0001] technical field [0002] The invention relates to the field of nanomaterial preparation, in particular to a method for metal-assisted large-area layered etching and transfer of silicon nanowire arrays, using metal-catalyzed electroless plating chemical method to etch silicon nanowire array technology, and adopting the method of direct heating in air The metal catalyst is processed so that the silicon nanowire array is etched to produce a neat fault in the secondary etching reaction, and the fault is used to transfer the silicon nanowire array. Background technique [0003] As a typical representative of one-dimensional silicon nanomaterials, silicon nanowires (SiNWs) not only have the special properties of traditional semiconductor materials, but also show field emission, thermal conductivity, visible photoluminescence and Catalysis and other physical and chemical properties have great application potential in nanoelectronic devices, optoelectronic devices and new ene...

Claims

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Application Information

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IPC IPC(8): B81C1/00
Inventor 揭建胜王艳张晓珍张希威卞良吴艺明
Owner SUZHOU UNIV
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