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Method for improving photoelectric conversion efficiency of solar cell panel

A technology of photoelectric conversion efficiency and solar panel, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve problems such as imperfect interface matching process, affecting photoelectric conversion efficiency, etc.

Active Publication Date: 2012-09-26
成都中浦科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the technical problem of affecting the photoelectric conversion efficiency due to the imperfect interface matching process between the ZnO-based transparent conductive film and the photoelectric conversion region film in the prior art, the present invention designs a method based on an improved TCO film layer to improve the photoelectricity of solar panels. The conversion efficiency method, by designing the TCO thin film layer as a multi-layer composite structure, and reasonably controlling the doping concentration of each layer to form a gradual gradient, greatly improves the light transmittance and electrical conductivity of the panel, effectively improving Photoelectric conversion efficiency of solar cells

Method used

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  • Method for improving photoelectric conversion efficiency of solar cell panel
  • Method for improving photoelectric conversion efficiency of solar cell panel
  • Method for improving photoelectric conversion efficiency of solar cell panel

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Experimental program
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Embodiment 1

[0027] Ensure that the substrate temperature of the sputtering equipment is 100-500 degrees Celsius, argon gas with a flow rate of 100-1000 sccm and oxygen gas with a flow rate of 0-20 sccm are used as reaction gases, and the deposition pressure is controlled at 1.0×10 -3 —8.0×10 -3 between, and then transported into the process chamber of the sputtering equipment to deposit Al-doped Zn0 film, the deposition rate is controlled by adjusting the flow rate and sputtering power, and the targets with different Al doping concentrations are arranged in sequence in the process chamber , the target distribution is 0.5-1 wt%, 1-2 wt%, 2-3 wt% Al-doped Zn0 target, each target has independent power control, the thickness of the three-layer Al-doped Zn0 film 100-200 nanometers, 500-600 nanometers, and 100-250 nanometers, respectively.

Embodiment 2

[0029] Ensure that the substrate temperature of the sputtering equipment is 100-500 degrees Celsius, argon gas with a flow rate of 100-1000 sccm is introduced as the reaction gas, and the deposition pressure is controlled at 1.0×10 -3 —8.0×10 -3 Between, and then transported into the process chamber of the sputtering equipment to deposit Ga-doped Zn0 film, the deposition rate is controlled by adjusting the flow rate and sputtering power, and the targets with different Ga doping concentrations are arranged in sequence in the process chamber , the target distribution is 0.2-0.57 wt%, 0.6-1 wt%, 1-1.5 wt% Ga-doped Zn0 target, each target has independent power control, the thickness of the three-layer Ga-doped Zn0 film They are 50-150 nm, 650-750 nm, and 50-150 nm, respectively.

Embodiment 3

[0031] Ensure that the substrate temperature of the sputtering equipment is 100-500 degrees Celsius, argon gas with a flow rate of 100-1000 sccm is introduced as the reaction gas, and the deposition pressure is controlled at 1.0×10 -3 —8.0×10 -3 Between, and then transported into the process chamber of the sputtering equipment to deposit Zr-doped Zn0 film, the deposition rate is controlled by adjusting the flow rate and sputtering power, and the targets with different Zr doping concentrations are arranged in sequence in the process chamber , the target distribution is 0.2-0.5 wt%, 0.5-0.8wt%, 0.8-1.2 wt% Zr-doped Zn0 target, each target has independent power control, the thickness of the three-layer Zr-doped Zn0 film 30-100 nanometers, 600-800 nanometers, and 50-150 nanometers, respectively.

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Abstract

The invention discloses a method for improving photoelectric conversion efficiency of solar cell panels and solves the technical problem that photoelectric conversion efficiency is affected due to imperfect processes of interface matching between a ZnO base transparent conductive film and a film in a photoelectric conversion area in the prior art. The technical scheme adopted in the invention is a method for improving photoelectric conversion efficiency of solar cell panels based on improved TCO film layers. The method comprises the step of depositing TCO film layers of ZnO base on a glass sheet, wherein the TCO film layers form a ZnO base composite film with 2-4 layers deposited on the glass sheet by ZnO base target with sputtering technology and doping concentrations of each layer of the composite film are distributed in gradient. The key of the invention is to design the TCO film layers in a multi-layer composite structure, control the doping concentrations of each layer reasonably to make the doping concentrations form a gradient, thus greatly enhancing light transmittance and conductivity of cell panels and effectively improving photoelectric conversion efficiency of solar cell panels.

Description

technical field [0001] The invention relates to a method for improving the photoelectric conversion efficiency of a solar cell panel, belonging to the field of solar cell manufacturing, in particular to a method for improving the photoelectric conversion efficiency of a solar cell panel based on an improved TCO thin film layer. Background technique [0002] With the development of photovoltaic power generation technology, especially the large-scale industrialization of thin-film solar cells in recent years, transparent conductive oxide thin films—abbreviated as TCO—as an indispensable part of thin-film solar cells have attracted great attention. The front electrode of thin-film solar cells uses transparent conductive oxide (TCO) glass, and its performance plays a vital role in the conversion efficiency of the cell. The solar cell requires the front electrode to have high transmittance and high conductivity, and the transparent conductive film requires the selected semiconduc...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈志维林宏达王毓婷马贺李兆廷
Owner 成都中浦科技有限公司
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