Solid state imaging device, method of producing solid state imaging device, and electronic apparatus

Abstract

The invention discloses a solid state imaging device, a method of producing solid state imaging device, and an electronic apparatus. A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2011-063974 filed in the Japan Patent Office on Mar. 23, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device having a vertical transistor, a method of manufacturing the solid-state imaging device, and electronic equipment provided with the solid-state imaging device. Background technique [0004] The solid-state imaging device is classified into an amplifying solid-state imaging device represented by a device such as a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) image sensor, or a solid-state imaging device represented by a device such as a charge coupled device (Charge Coupled Device, CCD). The device is a representative charge transport type solid-state imaging ...

AI Technical Summary

Problems solved by technology

In such a structure, the transfer channel and the overflow channel are basically the same when transferring signal charges, so it is difficult to design

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