Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Spray head of MOCVD (metal organic chemical vapor deposition) equipment reactor and connection structure thereof

A sprinkler and reactor technology, applied in the sprinkler field, can solve the problems of scrapped sprinkler, economic loss, cooling water leakage, etc.

Active Publication Date: 2014-04-09
HANGZHOU SILAN AZURE
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] 2. In order to weld the bottom layer 101 and the middle layer 103, an annular weld 104 will inevitably be produced, which is located below the cooling water annular channel 105; working under high temperature for a long time, it is easy to produce cooling water leakage, and once this problem occurs , the sprinkler head can only be scrapped, resulting in huge economic losses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spray head of MOCVD (metal organic chemical vapor deposition) equipment reactor and connection structure thereof
  • Spray head of MOCVD (metal organic chemical vapor deposition) equipment reactor and connection structure thereof
  • Spray head of MOCVD (metal organic chemical vapor deposition) equipment reactor and connection structure thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be further described below in conjunction with specific embodiment and accompanying drawing, set forth more details in the following description so as to fully understand the present invention, but the present invention can obviously be implemented in many other ways different from this description, Those skilled in the art can make similar promotions and deductions based on actual application situations without violating the connotation of the present invention, so the content of this specific embodiment should not limit the protection scope of the present invention.

[0027] Such as image 3 and Figure 5 As shown, the shower head of the MOCVD reactor in the embodiment of the present invention includes a shower assembly 1 and a top cover assembly 2 . The sprinkler assembly 1 comprises a bottom layer 11 , a middle layer 12 and a top layer 13 joined together. The top cover assembly 2 includes a top cover 21 .

[0028] image 3 The diagram ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention aims to provide a spray head of an MOCVD (metal organic chemical vapor deposition) equipment reactor and a connection structure thereof so as to reduce the adverse influence of welding a bottom layer and a middle layer on a bottom surface. The spray head comprises a spray component and a top cover component, wherein the top cover component comprises a top cover; the spray component comprises a bottom layer, a middle layer and a top layer which are connected together; a cooling water channel and a cooling water cavity are formed between the bottom layer and the middle layer; a V-group gas cavity is formed between the middle layer and the top layer; a III-group cavity is formed between the top layer and the top cover; the bottom layer is an inward-concave integral member which is provided with a bottom wall and a corral side wall protruding from the bottom; and the outer side surface of the middle layer is welded with the inner side surface of the corral side wall of the bottom layer.

Description

technical field [0001] The invention relates to a shower head, in particular, the invention relates to a shower head of a MOCVD equipment reactor. Background technique [0002] Metal-organic chemical vapor deposition equipment (MOCVD for short) uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as crystal growth source materials, and conducts vapor phase epitaxy on the substrate by thermal decomposition reaction. Process equipment for growing thin-layer single crystal materials of various III-V, II-VI compound semiconductors and their multiple solid solutions. As the core component of MOCVD equipment, the shower head plays a decisive role in the design and manufacture of the whole machine. [0003] figure 1 A conventional shower head structure used in an existing MOCVD reactor is shown, including a bottom layer 101 , a middle layer 106 and a top cover 107 . The middle layer 103 is provided with group V gas channels 106,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455
Inventor 丁云鑫徐小明周永君邬建伟
Owner HANGZHOU SILAN AZURE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com