Distributed feedback type organic semiconductor laser preparation method based on laser interferometer lithography

A laser interference lithography and distributed feedback technology, applied in the field of nanometer optoelectronic materials and devices, can solve the problems of complex process, expensive equipment, low efficiency, etc., and achieve the effects of good repeatability, high preparation efficiency and low cost

Inactive Publication Date: 2012-08-29
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional manufacturing methods of distributed feedback structures include: electron beam lithography, reactive ion beam etching, nanoimprinting technology, etc., but these methods ar

Method used

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  • Distributed feedback type organic semiconductor laser preparation method based on laser interferometer lithography
  • Distributed feedback type organic semiconductor laser preparation method based on laser interferometer lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment 1: Preparation of one-dimensional organic semiconductor nano-grating structure (one-dimensional structure)

[0019] 1) The recording medium S1805 photoresist is spin-coated on a glass substrate. The spin coating speed is 1800rpm, and the corresponding film thickness is 500nm;

[0020] 2) Place the photoresist film sample prepared above in the interference optical path, such as figure 1 As shown, the angle between the two light beams α=22°, and the laser wavelength used for interference lithography is 355nm, the interference fringes can be recorded on the photoresist film, and then the photoresist sample is developed and fixed to obtain Periodic one-dimensional distributed feedback structure;

[0021] 3) The atomic force microscopy image of the prepared one-dimensional distributed feedback structure is as follows: figure 2 As shown, in the case of α=22°, the period of the prepared organic semiconductor grating is 355nm.

[0022] 4) Dissolving the organic ...

Embodiment 2

[0024] Embodiment 2: Preparation of two-dimensional distributed feedback structure (two-dimensional square structure)

[0025] On the basis of the one-dimensional distributed feedback structure preparation technology realized in Example 1, the sample is rotated 90° around its normal, and then the second interference exposure is performed to realize the preparation of the two-dimensional distributed feedback structure; and then The F8BT organic semiconductor solution is spin-coated on the distributed feedback structure of the recording medium to obtain a two-dimensional distributed feedback organic organic semiconductor laser.

Embodiment 3

[0026] Embodiment 3: Preparation of two-dimensional distributed feedback structure (two-dimensional triangular structure)

[0027] On the basis of the one-dimensional distributed feedback structure preparation technology realized in Example 1, the sample is rotated 60° around its normal, and then the second interference exposure is performed to realize the preparation of the two-dimensional distributed feedback structure; and then The F8BT organic semiconductor solution is spin-coated on the distributed feedback structure of the recording medium to obtain a two-dimensional distributed feedback organic organic semiconductor laser.

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Abstract

The invention discloses a distributed feedback type organic semiconductor laser preparation method based on laser interferometer lithography and belongs to the technical fields of nanometer photoelectron materials and devices. The preparation method comprises the following steps: 1) coating a substrate with recording medium in a spinning way, thus obtaining an uniform recording medium thin film with thickness of 50-500nm; 2) reacting a laser interference figure with the recording medium thin film, thus forming a high-quality recording medium distributed feedback type structure; 3) dissolving a fluorescence-emission organic semiconductor material in an organic solvant; 4) coating the recording medium distributed feedback type structure with the organic semiconductor solution in a spinning way, thus obtaining an organic semiconductor thin film with uniform thickness of 50-500nm. The preparation method is low in cost, excellent in repeatability and high in preparation efficiency, and can be used for preparing large-area, non-defective, one-dimensional and two-dimensional distributed feedback type organic semiconductor lasers; and the prepared two-dimensional organic semiconductor laser has a controllable structure.

Description

technical field [0001] The invention belongs to the technical field of nano-optoelectronic materials and devices, and relates to the use of laser interference lithography to manufacture large-area nano-gratings. The organic semiconductor solution can be spin-coated on the nano-gratings to obtain period-controllable one-dimensional and two-dimensional distributed feedback organic A semiconductor laser. Background technique [0002] Distributed feedback organic semiconductor lasers are a research topic that is widely concerned in the world, and are of great significance in both practical applications and basic research. The traditional manufacturing methods of distributed feedback structures include: electron beam lithography, reactive ion beam etching, nanoimprinting technology, etc., but these methods are complicated in process, expensive in equipment, and low in efficiency, which is not conducive to the practical application of distributed feedback organic semiconductor las...

Claims

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Application Information

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IPC IPC(8): H01S5/12
Inventor 张新平翟天瑞
Owner BEIJING UNIV OF TECH
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