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Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof

A transparent conductive film and powder technology, which is applied in coating, metal material coating process, vacuum evaporation plating, etc., can solve the problems of high cost and difficulty in obtaining low-resistivity SZO film, and achieve easy control and film adhesion Good performance and low resistance effect

Inactive Publication Date: 2012-08-29
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to obtain SZO thin films with low resistivity when prepared at low temperature without heat treatment.
[0004] Ultra-thin conductive metal layers can also be used as transparent conductive films, but currently only noble metals such as gold, silver, and platinum with low resistivity and good chemical stability can be used, which are expensive and limit their applications.

Method used

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  • Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof
  • Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof
  • Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof

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preparation example Construction

[0017] see figure 1 , showing a method for preparing a multilayer transparent conductive film according to an embodiment of the present invention, which includes the following steps:

[0018] S01: SiO 2 Powder and ZnO powder are mixed and sintered as SZO target material, the SiO 2 The mass ratio of the powder to the ZnO powder is 1 / 199-1 / 9;

[0019] S02: Provide CuSn target material, wherein the mass ratio of Cu to Sn is 7 / 3~19 / 1;

[0020] S03: Put the SZO target material and the CuSn target material into the magnetron sputtering chamber, alternately sputter the SZO layer and the CuSn layer on the substrate to obtain a sandwich structure SZO-CuSn-SZO transparent conductive film.

[0021] In step S01, the SiO 2 Mix the powder and ZnO powder evenly, and sinter, for example, at a temperature of 900° C. to 1350° C. to obtain an SZO ceramic target. Preferably, the sintering temperature is 1200°C. SiO 2 The mass ratio to ZnO is preferably 1 / 120 to 1 / 20, more preferably, SiO ...

Embodiment 1

[0029] Choose SiO2 2 :ZnO=1:49 (mass ratio) powder, after uniform mixing, sintered at a high temperature of 1250°C to form a Φ60×2mm ceramic target, and a custom-made CuSn target (the mass ratio of Cu and Sn is 9 / 1, Φ60× 2mm) together into the vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the argon gas of 20 sccm is introduced, and the pressure is adjusted to 1.0 Pa. The sputtering power of the SZO target is 100W, and the sputtering power of the CuSn target is 60W. The thickness of the three layers of the obtained SZO-CuSn-SZO film is 60nm, 15nm, 60nm respectively, the sheet resistance is 10Ω / □, and the average transmittance of visible light is 85%.

Embodiment 2

[0031] Choose SiO2 2:ZnO=1:49 (mass ratio) powder, after uniform mixing, sintered at a high temperature of 1250°C to form a Φ60×2mm ceramic target, and a custom-made CuSn target (the mass ratio of Cu and Sn is 9 / 1, Φ60× 2mm) together into the vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the argon gas of 20 sccm is introduced, and the pressure is adjusted to 1.0 Pa. The sputtering power of the SZO target is 100W, and the sputtering power of the CuSn target is 60W. The thickness of the three layers of the obtained SZO-CuSn-SZO film is 70nm, 5nm and 80nm respectively, the sheet resistance is 450Ω / □, and the average transmittance of visible light is 93%.

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Abstract

The invention relates to the field of preparing semiconductor materials and provides a preparation method of a multilayer transparent conductive thin film as well as a prepared thin film and an application thereof. The method comprises the following steps: mixing SiO2 powder with ZnO powder and sintering to serve as an SZO target, wherein the mass ratio of the SiO2 powder to the ZnO powder is 1 / 199-1 / 9; providing a CuSn target, wherein the mass ratio of the Cu to the Sn is 7 / 3-19 / 1; and putting the SZO target and the CuSn target into a magnetic-control sputtering cavity, orderly sputtering an SZO layer and a CuSn layer on a substrate so as to obtain an SZO-CuSn-SZO transparent conductive thin film which is of a sandwich structure. The invention further provides the multilayer transparent conductive thin film obtained by using the method and the application of the film in semiconductor photoelectric devices.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic material preparation, and in particular relates to a preparation method of a multilayer transparent conductive film, the prepared film and its application. Background technique [0002] Transparent conductive film is a photoelectric material that combines optical transparency and conductivity. Due to its excellent photoelectric properties, it has become a research hotspot and a frontier topic in recent years. It can be widely used in solar cells, LEDs, TFTs, LCDs and touch screens Wait for the screen to display the field. Although ITO film is currently the most widely used transparent conductive film material with excellent comprehensive photoelectric properties, indium is toxic, expensive, poor in stability, and easy to be reduced in a hydrogen plasma atmosphere. People are trying to find a low-cost It is an ITO replacement material with excellent performance. Among them, zinc oxide ...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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