Etchant composition for a single molybdenum film

Abstract

The present invention relates to an etchant composition for a single molybdenum film, comprising: 5 to 25 wt % of H2O2; 0.5 to 3 wt % of a cyclic amine compound; 0.5 to 5 wt % of an additive containing one or two or more selected from among a group consisting of sodium dihydrogen citrate, disodium hydrogen citrate, disodium hydrogen phosphate, trisodium citrate and acetate salts; with the remainder being water.

Description

technical field [0001] The invention relates to an etchant composition for a monolayer molybdenum film. [0002] This application claims the benefit of Korean Patent Application No. 10-2009-0110138 filed on Nov. 16, 2009, the entire contents of which are hereby incorporated by reference into this application. Background technique [0003] Semiconductor devices or flat panel displays include TFTs or the like. The TFT includes a gate electrode and source / drain electrodes. Methods of forming these electrodes include metal film formation processes, photolithography processes, and etching processes. This method may further include cleaning processes performed before and after each individual unit process. Here, the metal film formation process is performed by sputtering. In addition, the photolithography process includes the steps of applying a photoresist material on the metal film, exposing and developing selected areas of the photoresist material. Also, the etching proces...

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Problems solved by technology

However, the problem is that it is difficult to put the composition into practical use because the number of etching layers is small

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