Thin film transistor array substrate and manufacturing method thereof

A technology for thin film transistors and array substrates, applied in the field of thin film transistor array substrates and their fabrication, can solve problems such as high product cost, low equipment productivity, and excessive mask exposure times.

Active Publication Date: 2014-10-22
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a thin film transistor array substrate and a manufacturing method thereof, which are used to solve the problems in the prior art, such as high product cost, low yield rate and equipment The problem of low productivity

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  • Thin film transistor array substrate and manufacturing method thereof
  • Thin film transistor array substrate and manufacturing method thereof
  • Thin film transistor array substrate and manufacturing method thereof

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Embodiment Construction

[0028] Aiming at the problems of high product cost, low yield rate and low equipment capacity caused by too many mask exposure times in the process of manufacturing a thin film transistor array substrate in the prior art, an embodiment of the present invention provides a method for manufacturing a thin film transistor array substrate method, the flow of the method is as follows figure 1 As shown, the specific execution steps are as follows:

[0029] S10: preparing an active layer thin film and a conductive layer thin film on the substrate.

[0030] S11: Deposit the source-drain layer film on the conductive layer film, and process the conductive layer film and the source-drain layer film with a gray-tone or half-tone masking process to obtain at least two data lines, pixel electrodes, and TFT sources The drain electrode and the channel; the source of a row of TFTs on the array substrate is connected to a data line.

[0031] S12: After depositing the insulating layer film cove...

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Abstract

Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source / drain electrode layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source / drain electrode layer thin film using gray tone or half tone masking process, to form at least two data lines, a pixel electrode and source / drain electrodes of the thin film transistor (TFT); after depositing an insulating layer thin film covered the active layer thin film, the source / drain electrodes, the data lines and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning lines cross with the data wires.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] Currently, flat panel displays are mostly used in the display field, and most of the flat panel display devices are active matrix liquid crystal display devices (Active Matrix / Organic Liquid Crystal Display, AMLCD). Existing AMLCD devices include thin film transistor (Thin Film Transistor, TFT) array substrates. Since amorphous silicon a-Si is easy to realize large-area preparation at low temperature, and the preparation technology is relatively mature, it is currently the most popular method for manufacturing TFT array substrates. widely used material. However, the bandgap of the a-Si material is only 1.7V, it is opaque to visible light, and has photosensitivity in the visible light range, so it is necessary to add an opaque metal mask (black matrix) to block light, which i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12G02F1/1368
CPCH01L27/1288H01L27/1225H01L27/1259H01L27/124G02F1/136286H01L29/41733H01L29/78618H01L27/127
Inventor 宁策吕志军
Owner BOE TECH GRP CO LTD
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