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SixNy-based resistor-type memory and manufacturing method and application thereof

A resistive and memory technology, applied in the field of microelectronics, can solve the problem that the resistive storage layer is rarely reported, and achieve the effect of high practical value, large storage window, and low power consumption

Inactive Publication Date: 2012-07-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are few reports on the use of nitride materials as resistive storage layers.

Method used

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  • SixNy-based resistor-type memory and manufacturing method and application thereof
  • SixNy-based resistor-type memory and manufacturing method and application thereof
  • SixNy-based resistor-type memory and manufacturing method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0038] Embodiment 1: First, deposit a 400nm-thick dielectric layer on the W plug, pattern the dielectric layer, and etch through holes; then, deposit a layer of 20nm-thick Si by PECVD or ALD process. x N y thin film layer, and adjust the Si by controlling the process conditions of PECVD or ALD x N y The chemical composition ratio of the film is such that the Si:N ratio is 2:1; then, a layer of Cu with a thickness of 500 nm is deposited as the upper electrode by magnetron sputtering, and the Cu electrode above the through hole is ground by CMP. Flat, so that the RRAM device structure is completely in the through hole of the dielectric layer; finally, the solder layer, the interconnection metal layer, and the anti-reflection layer are deposited in sequence, and the aluminum lead wiring is patterned by photolithography and etching methods.

[0039] Figure 4 Cu / Si is given x N y / W device current-voltage curve, the device has bipolar resistance transition characteristics in ...

Embodiment 2

[0040] Embodiment 2: The difference between this embodiment and Embodiment 1 is that Embodiment 2 adopts an ion implantation process to Si x N y The chemical composition ratio of the film is adjusted, and the Ti metal film is used as the upper electrode of the resistive switch device. Figure 5 Ti / Si is given x N y / W current-voltage curve, the device has a unipolar resistance transition characteristic during the voltage sweep. The unipolar switching resistive memory device is beneficial to the integration of 1D1R, and at the same time simplifies the design difficulty of peripheral circuits.

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Abstract

The invention relates to a SixNy-based resistor-type memory and a manufacturing method and application thereof, belonging to the technical field of microelectronics. The SixNy-based resistor-type memory comprises an upper electrode, an insulated dielectric layer, a resistance-variable storage layer and a lower electrode, wherein the insulated dielectric layer is arranged on the lower electrode; the lower electrode provided with the insulated dielectric layer is provided with a hole which penetrates through the insulated dielectric layer; the resistance-variable storage layer and the upper electrode are both positioned in the hole; and the resistance-variable storage layer is positioned between the upper electrode and the lower electrode, and the resistance-variable storage layer is made of a SixNy material, wherein y is less than x and more than 3 / 4. The SixNy-based resistor-type memory is completely compatible with a CMOS (Complementary Metal Oxide Semiconductor) process and has the characteristics of extralarge storage window, high speed and low power consumption.

Description

technical field [0001] The invention relates to a resistive memory and its preparation method and application, in particular to a Si x N y The base resistive memory and its preparation method and application belong to the technical field of microelectronics. Background technique [0002] Resistive random access memory (RRAM) has attracted widespread attention due to its simple structure, compatibility with CMOS technology, and its advantages of high speed, low power consumption, high density, low cost, and the ability to break through the limitations of technology generation development. Attention has gradually become a research hotspot in the new generation of non-volatile memory. Resistive memory enables the storage medium to reversibly switch between a high resistance state (High Resistance State, HRS) and a low resistance state (Low Resistance State, LRS) through the action of an electrical signal, thereby realizing the data storage function. At present, material syst...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 刘琦刘明龙世兵吕杭炳谢常青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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