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Integrated circuit metal interconnecting structure and manufacture method thereof

A metal interconnection structure, integrated circuit technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as crowding and increase wire resistance, and achieve high conductivity, reliability, and low sheet resistance. Effect

Inactive Publication Date: 2012-07-18
PEKING UNIV
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

But these barrier layers have a much higher resistivity than copper, and the effect is equivalent to "crowding" some of the copper wire space from the interconnect wire, increasing the wire resistance due to the reduced effective cross-sectional area of ​​the copper

Method used

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  • Integrated circuit metal interconnecting structure and manufacture method thereof
  • Integrated circuit metal interconnecting structure and manufacture method thereof
  • Integrated circuit metal interconnecting structure and manufacture method thereof

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Embodiment Construction

[0021] The preferred embodiment of the present invention is described in detail below with reference to the accompanying drawings of the present invention.

[0022] The preparation method of the integrated circuit metal interconnection structure of the present invention comprises the following steps:

[0023] (1) grow the silicon nitride dielectric material layer 2 by PECVD on the surface of the structure of the prepared lower layer copper interconnection line 1, such as figure 1 shown;

[0024] (2) Depositing a silicon dioxide dielectric layer 3 with a thickness of 1 μm by PECVD on the surface of the silicon nitride dielectric material layer 2, as figure 2 shown.

[0025] (3) Reactive ion etching (RIE) is used to etch the through hole connecting the lower copper interconnection 1 and the upper copper interconnection 5 in the silicon dioxide dielectric layer 3 and the silicon nitride dielectric material layer 2 Trench (dual damascene process), such as image 3 shown.

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Abstract

The invention discloses an integrated circuit metal interconnecting structure and a manufacture method of the integrated circuit metal interconnecting structure. According to the invention, carbon atoms of graphene are elementary substance carbon formed by being orderly arranged according to a hexagonal lattice, and the graphene is used as a diffusion impervious layer in copper interconnection of an integrated circuit, wherein all sp2 hybridized carbon atoms of the graphene have saturated bonds and very stable structure, thus the graphene diffusion impervious layer has excellent heat stability and chemical stability, and can effectively prevent copper atoms from diffusing in silicon and insulation mediums.

Description

technical field [0001] The invention relates to nano-processing technology, in particular to an integrated circuit metal interconnection structure and a preparation method thereof. Background technique [0002] With the rapid development of integrated circuits, the size of devices continues to shrink, the density of devices continues to increase, and the length and number of interconnection lines and layers between devices and circuits are increasing. Currently, 0.18μm high-performance ULSI (such as CPU) has With up to 7 layers of copper interconnects, the interconnect length is about 4km. Because Cu has lower resistivity than Al (Al's resistivity is 2.62 μΩ cm, while Cu is 1.69 μΩ cm) and higher resistance to electromigration (can be increased by about two orders of magnitude), Cu is generally considered It is a preferred material for deep submicron and nanometer IC multilayer interconnection lines. But Cu on Si and SiO 2 Poor adhesion and large diffusion coefficient, on...

Claims

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Application Information

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IPC IPC(8): H01L23/532H01L21/768
Inventor 魏芹芹曹宇崔晓锐尹金泽魏子钧赵华波傅云义黄如张兴
Owner PEKING UNIV
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