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Acidic etching solution, as well as preparation method and application thereof

An acidic etching solution and etching solution technology, applied in the field of etching solution and its preparation, can solve problems such as odor, difficulty in controlling etching speed, etc., and achieve the effects of reducing load, simplifying etching speed, and suppressing surface ripples

Active Publication Date: 2012-07-18
SHANGHAI ZHENGFAN TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] As mentioned above, in the 3-component etching solution composed of hydrofluoric acid, nitric acid, acetic acid (or phosphoric acid), in addition to the problem that the etching rate is difficult to control during the etching process, the decline in etching performance and the instability of the etching process are also problems.
In addition, the etching solution contains acetic acid and phosphoric acid, and there is also the problem of bad smell, which makes it difficult to dispose of the waste solution
It is difficult to recycle waste liquid after use, which has become a big problem in the industry
[0011] On the other hand, as described above, etching solutions containing fluorosilicate components have not yet achieved good etching performance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] The etching solution of the present invention can be prepared by reacting hydrofluoric acid, nitric acid and silicide.

[0044] Hydrofluoric acid may be hydrogen fluoride gas, hydrogen fluoride acid, or the like. Nitric acid can be aqueous nitric acid, concentrated nitric acid, fuming nitric acid. The concentrated nitric acid can be a 70wt% nitric acid aqueous solution, and the fuming nitric acid can be a 98wt% nitric acid aqueous solution. The smaller the content of any impurity in hydrofluoric acid and nitric acid, the better, the impurity content is usually below 10ppb, preferably below 5ppb.

[0045] When hydrogen fluoride gas or fuming nitric acid is used, there is less moisture brought by the raw materials, and high-concentration nitric acid and hydrofluoric acid etching solutions can be prepared. In particular the last is the combined use of hydrogen fluoride as hydrofluoric acid and fuming nitric acid as nitric acid.

[0046] As the silicon compound, there ma...

Embodiment 2

[0050] Hydrogen fluoride, 70wt% nitric acid aqueous solution and silicon are used as raw materials and mixed according to the proportion of 15wt% hydrofluoric acid, 40wt% nitric acid and 14.5wt% fluosilicic acid to obtain an acidic etching solution.

[0051] Using a polyethylene etching tank, the mixed acid was circulated at room temperature. Gently put a ground silicon wafer into the etching tank with a diameter of 125mm, usually after 3 minutes, lift the silicon wafer, wash it with water, and the etching ends.

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PUM

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Abstract

The invention relates to an acidic etching solution, as well as a preparation method and an application thereof. The acidic etching solution comprises 1-20% by weight of hydrofluoric acid, 20-60% by weight of nitric acid, 1-20% by weight of fluosilicic acid and the balance of water. The preparation method comprises the following steps of: with fluorine hydride gas or hydrofluoric acid, 70-98% by weight of nitric acid water solution and silicon or silicon dioxide as raw materials, mixing according to the mixture ratio to get the acidic etching solution. The acidic etching solution is used for etching silicon wafers, GaAs wafers, GaP wafers or InP wafer. The acidic etching solution disclosed by the invention is different from the traditional etching solution, acetic acid, phosphoric acid and the like, which can cause greater burden on an environment, are not required, peculiar smell can be avoided, and wastes can also be reduced.

Description

technical field [0001] The invention belongs to the field of etching solution and its preparation method and application, in particular to an acid etching solution and its preparation method and application. Background technique [0002] Semiconductor devices in electronic devices such as computers include semiconductor integrated circuits and optical semiconductors as control elements and memory elements. During the manufacturing process of these semiconductor devices, substrates such as silicon, GaAs, GaP, and InP need to be etched or metal thin films are laminated to form circuits. In particular, semiconductor devices using silicon wafers are the most widely used and the most used in the industry. During the manufacturing process of semiconductor devices, multiple surface treatments are required on the substrate before circuits are formed on the substrate. The etching process is extremely important in determining the state of the substrate. [0003] The traditional tec...

Claims

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Application Information

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IPC IPC(8): C23F1/24
Inventor 顾顺超管世兵严俊
Owner SHANGHAI ZHENGFAN TECH
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