Acidic etching solution, as well as preparation method and application thereof
An acidic etching solution and etching solution technology, applied in the field of etching solution and its preparation, can solve problems such as odor, difficulty in controlling etching speed, etc., and achieve the effects of reducing load, simplifying etching speed, and suppressing surface ripples
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Embodiment 1
[0043] The etching solution of the present invention can be prepared by reacting hydrofluoric acid, nitric acid and silicide.
[0044] Hydrofluoric acid may be hydrogen fluoride gas, hydrogen fluoride acid, or the like. Nitric acid can be aqueous nitric acid, concentrated nitric acid, fuming nitric acid. The concentrated nitric acid can be a 70wt% nitric acid aqueous solution, and the fuming nitric acid can be a 98wt% nitric acid aqueous solution. The smaller the content of any impurity in hydrofluoric acid and nitric acid, the better, the impurity content is usually below 10ppb, preferably below 5ppb.
[0045] When hydrogen fluoride gas or fuming nitric acid is used, there is less moisture brought by the raw materials, and high-concentration nitric acid and hydrofluoric acid etching solutions can be prepared. In particular the last is the combined use of hydrogen fluoride as hydrofluoric acid and fuming nitric acid as nitric acid.
[0046] As the silicon compound, there ma...
Embodiment 2
[0050] Hydrogen fluoride, 70wt% nitric acid aqueous solution and silicon are used as raw materials and mixed according to the proportion of 15wt% hydrofluoric acid, 40wt% nitric acid and 14.5wt% fluosilicic acid to obtain an acidic etching solution.
[0051] Using a polyethylene etching tank, the mixed acid was circulated at room temperature. Gently put a ground silicon wafer into the etching tank with a diameter of 125mm, usually after 3 minutes, lift the silicon wafer, wash it with water, and the etching ends.
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