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Multilayer transparent electroconductive thin film

A transparent conductive film, amorphous technology, applied in the direction of layered products, etc., can solve the problems of poor electrical conductivity and high resistivity, and achieve the effects of good uniformity, low resistivity, and improved interface contact performance.

Inactive Publication Date: 2012-07-18
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, amorphous oxide also has a disadvantage, that is, its electrical conductivity is slightly poor, and its resistivity is high. The lowest resistivity reported at present is usually 10 –3 Ωcm, which cannot meet the needs of practical applications

Method used

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  • Multilayer transparent electroconductive thin film
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  • Multilayer transparent electroconductive thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Using glass as a substrate, sequentially depositing InAl on it 0.1 ZnO 3.65 Amorphous oxides, metallic Cu and InAl 0.1 ZnO 3.65 Amorphous oxide, forming 3 layers of amorphous transparent conductive film.

[0022] Prepared by pulsed laser deposition method, the specific steps are as follows:

[0023] 1) with In 2 o 3 、Al 2 o 3 and ZnO powder as the source material, weighed according to the atomic ratio In:Al:Zn=1:0.1:1, and sintered to obtain InAl 0.1 ZnO 3.65 ceramic target.

[0024] 2) Fix the glass substrate on the sample tray after cleaning, put it into the reaction vacuum chamber, and put the InAl 0.1 ZnO 3.65 The ceramic target is mounted on the pulsed laser deposition target head, and the growth chamber is fed with O 2 , control the total pressure to 0.01Pa, raise the substrate temperature to 300°C, deposit 56nm thick amorphous InAl 0.1 ZnO 3.65 film layer.

[0025] 3) Remove the InAl 0.1 ZnO 3.65 For the ceramic target, the pure Cu metal target i...

Embodiment 2

[0029] Using glass as a substrate, metal Cu, InAl are deposited sequentially on it 0.1 ZnO 3.65 Amorphous oxide, forming 2 layers of amorphous transparent conductive film.

[0030] Prepared by pulsed laser deposition method, the specific steps are as follows:

[0031] 1) with In 2 o 3 、Al 2 o 3 and ZnO powder as the source material, weighed according to the atomic ratio In:Al:Zn=1:0.1:1, and sintered to obtain InAl 0.1 ZnO 3.65 ceramic target.

[0032] 2) Fix the glass substrate on the sample tray after cleaning, and put it into the reaction vacuum chamber. Install the pure Cu metal target on the pulsed laser deposition target head, and the vacuum degree of the growth chamber is pumped to 1×10 -3 Pa, a 20 nm thick Cu layer was deposited.

[0033] 3) Remove the pure Cu metal target, InAl 0.1 ZnO 3.65 The ceramic target is installed on the target frame, and then embedded in the target head of the pulsed laser deposition device, and the growth chamber is fed with O ...

Embodiment 3

[0036] Using glass as a substrate, sequentially depositing InSi on it 0.1 ZnO 3.65 Amorphous oxide, metal Ag, InSi 0.1 ZnO 3.65 Amorphous oxide, forming 3 layers of amorphous transparent conductive film.

[0037] Prepared by magnetron sputtering method, the specific steps are as follows:

[0038] 1) with In 2 o 3 , SiO 2 and ZnO powder as the source material, weighed according to the atomic ratio In:Si:Zn=1:0.1:1, and sintered to obtain InSi 0.1 ZnO 3.65 ceramic target.

[0039] 2) Fix the glass substrate on the sample tray after cleaning, put it into the reaction vacuum chamber, and put the InSi 0.1 ZnO 3.65 The ceramic target is installed on the magnetron sputtering target head, and the growth chamber is connected to O 2 , the total pressure is controlled at 1.5Pa, the substrate temperature is raised to 300°C, and 80nm thick amorphous InSi is deposited 0.1 ZnO 3.65 film layer.

[0040] 3) Remove the InSi 0.1 ZnO 3.65 For the ceramic target, the pure Ag metal ...

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Abstract

The invention discloses a multilayer transparent electroconductive thin film which comprises a substrate, wherein n (n>=2) layers of amorphous oxide layers and electroconductive modified layers are deposited on the substrate alternately and odd layers can be either amorphous oxide layers or electroconductive modified layers. A pulsed laser deposition method or a magnetron sputtering method is used for the preparation of the thin film. The multilayer transparent electroconductive thin film has very low electrical resistivity, but has high visible light transmission and excellent comprehensive photoelectric property, as well as low surface roughness, is easy to prepare in large area evenly and etch by a process, can be applied to fields of display devices, luminescent devices, solar cells and the like, especially to the field of flexible devices.

Description

technical field [0001] The invention relates to a multilayer amorphous transparent conductive film. Background technique [0002] Transparent conductive films are widely used in flat panel displays, solar cells, energy-saving infrared reflective films, electrochromic windows, etc. due to their electrical conductivity close to that of metals and good permeability. The future development trend is the flexibility and full transparency of products. In order to better apply to flexible devices, people have developed amorphous oxide materials. Compared with crystalline oxides, amorphous oxides have some significant advantages, such as: amorphous oxides are easier to etch, and can be etched quickly with only weak acid; amorphous oxides have lower surface roughness , can effectively improve interface contact; amorphous oxide has good flexibility, is not easy to crack and damage when subjected to mechanical pressure, and has good compatibility with flexible substrates. [0003] How...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B9/04
Inventor 吕建国吴萍张杰叶志镇张焱
Owner ZHEJIANG UNIV
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