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Deposition method of SiOx passive film and LED (light emitting diode) chip with passive film

A technology of LED chip and deposition method, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of leakage, low density of passivation films, etc., and achieve the effect of improving the effect, improving the quality of the film, and improving the density.

Inactive Publication Date: 2012-07-11
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for depositing a SiOx passivation film and an LED chip with the passivation film, so as to solve the technical problem of low passivation film density and leakage in the prior art

Method used

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  • Deposition method of SiOx passive film and LED (light emitting diode) chip with passive film
  • Deposition method of SiOx passive film and LED (light emitting diode) chip with passive film
  • Deposition method of SiOx passive film and LED (light emitting diode) chip with passive film

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preparation example Construction

[0028] In the preparation method provided by the invention, the steps of activation and pre-deposition are performed sequentially on the surface of the preheated wafer, and the steps of activation and pre-deposition are repeated for many times. The prepared passivation film is dense, the internal stress of the film is small, and the passivation effect of the wafer is enhanced. Therefore, the purpose of improving the light extraction efficiency of the wafer is achieved.

[0029] The method provided by the invention takes the wafer to be processed which has been preheated by conventional methods as the processing object. Activate it first. From the preheating step, the wafer to be processed has been in the PECVD chamber, so the activation treatment is also carried out in the PECVD chamber, which can reduce the adverse effects on the wafer surface caused by the continuous replacement of equipment. Treating the preheated wafer to be processed under the conditions of the aforemen...

Embodiment 1

[0057] Include the following steps:

[0058] 1) The chip to be deposited with a passivation film is cleaned with glue-removing solution and deionized water, and ultrasonic waves are added at the same time, and then blown and dried in a nitrogen atmosphere with a drier;

[0059] 2) The wafer is placed on the wafer stage of the PECVD machine, and nitrogen gas with a flow rate of 500 sccm is introduced for 3 minutes to preheat the wafer, and the temperature of the wafer stage is 350 ° C;

[0060] 3) After preheating, use plasma to activate the cavity and wafer, and the plasma is N 2 Plasma, treatment 120s, RF power 100W, gas flow 1200sccm, chamber pressure 1100mtorr;

[0061] 4) Pre-deposition of SiOx passivation film, deposited at 250°C for 60s, chamber pressure 800mtorr, N 2 O flow 800sccm, 5% SiH 4 / N 2 The flow rate is 100sccm, the RF power is 50W, and the deposition thickness is SiOx passivation film;

[0062] 5) Repeat step 3) and step 4) to be a cycle, and cycle 6 t...

Embodiment 2

[0066] Include the following steps:

[0067] 1) The wafer to be deposited with a passivation film is cleaned with degumming solution and deionized water, and ultrasonic waves are added simultaneously, and then blown and dried in a nitrogen atmosphere with a drier;

[0068] 2) The wafer is placed on the wafer stage of the PECVD machine, and nitrogen gas with a flow rate of 1000 sccm is introduced for 1 minute to preheat the wafer, and the temperature of the wafer stage is 250 ° C;

[0069] 3) After preheating, use plasma to activate the cavity and wafer, and the plasma is N 2 O plasma, treatment 60s, RF power 250W, gas flow 700sccm, chamber pressure 900mtorr;

[0070] 4) Pre-deposition of SiOx passivation film, deposited at 300°C for 30s, chamber pressure 600mtorr, N 2 O flow 700sccm, 5% SiH 4 / N 2 The flow rate is 200sccm, the RF power is 25W, and the deposition thickness is SiOx passivation film;

[0071] 5) Repeat step 3) and step 4) as a cycle, and cycle 4 times;

...

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Abstract

The present invention provides a deposition method of a SiOx passive film and an LED (light emitting diode) chip with the passive film. The deposition method of the SiOx passive film comprises the following steps: obtaining a preheated wafer by a preheating step; depositing a SiOx passive film on the surface of the preheated wafer after processing the preheated wafer by multiple plasma activation steps and SiOx passive film pre-deposition steps in turn and repeating the plasma activation step and the SiOx passive film pre-deposition step in turn for 4-6 times, wherein the preheating step is performed under the nitrogen atmosphere. The deposition is performed repeatedly for many times and after each deposition, the plasma is used to bomb the passive film, thus the Si atom of the passive film is completely oxidized, the quality of the SiOx film is improved and the compactness of the passive film is increased, therefore the passive effect is increased.

Description

technical field [0001] The invention relates to the field of production of light-emitting diode (LED) passivation film, in particular to a deposition method of SiOx passivation film. Another aspect of the present invention also includes an LED chip having the above-mentioned passivation film. Background technique [0002] Commonly used LED chips are single crystal components. The atomic activity on the surface of the single crystal is very high, and it is easy to adsorb other impurity atoms or groups, which will degrade the performance of the device. Therefore, it is often necessary to deposit or grow a passivation layer composed of an insulating medium on the surface of the device. membrane. The passivation film can isolate the internal components of the LED chip from the outside world and prevent electric leakage. When the passivation film used is made of SiOx, Si 3 N 4 Or when composed of SiON, since the refractive index of these passivation films is larger than that ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/02
Inventor 汪延明姚禹许亚兵侯召男牛凤娟
Owner XIANGNENG HUALEI OPTOELECTRONICS
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