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Method for in situ growth of metal oxide, metal nitride and metal carbide nanowires

A technology of metal nanowires and metal carbides, applied in the fields of metal nitrides, metal carbide nanowires, and in-situ growth of metal oxides, to avoid technical difficulties

Inactive Publication Date: 2012-06-27
DALIAN UNIV OF TECH
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Problems solved by technology

However, the in situ preparation of metal oxide, nitride or carbide nanowires by this method has not been reported.

Method used

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Embodiment Construction

[0006] The specific implementation manner of the present invention will be described in detail below in conjunction with the technical solutions.

[0007] Two-step two-dimensional electrophoresis method in situ growth of metal nanowires between two parallel electrodes. Parallel conductive electrodes are prepared on the polished surface of the insulating substrate by using semiconductor thin film etching process, and the distance between the electrodes is between 0.1-50 microns. A metal salt solution soluble in an organic solvent or water is prepared with a purity of 99.9%. The metal elements in the metal salt used here include: Sn, Ti, Zn, Cu, Ga, Fe, Ni, Co, In, Cr, W, La, etc. Then the metal salt solution was dripped between the prepared parallel conductive electrodes. Then the two electrodes were connected to an electrochemical workstation, and the experimental control parameters were as follows: firstly, an alternating electric field with a frequency range of 0-1000 Hz a...

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Abstract

The invention provides a method for in situ growth of metal oxide, metal nitride and metal carbide nanowires, which belongs to the technical field of chemical engineering of materials. The invention is characterized in that: a semiconductor etching process is employed for preparing parallel conductive electrodes on a polished surface of an insulation substrate; a metal salt solution soluble in an organic solvent or water is dropped between the prepared electrodes; by using a two-step dimensional electrophoresis method, an alternating current field with a frequency range of 0 to 1000 Hz and an amplitude of 1 to 20 V is applied at two ends of the electrodes for 1 to 50 s, and then frequency is increased to be in a high frequency area of 2 MHz to 20 GHz and is maintained for 1 s to 30 min; in situ growth of metal nanowires between the two electrodes is carried out, and then the metal nanowires are respectively roasted in an oxygen atmosphere, an ammonia atmosphere and a hydrocarbon atmosphere at a temperature of 400 to 1600 DEG C so as to obtain corresponding metal oxide, metal nitride and metal carbide nanowires. The beneficial effects of the invention are as follows: in situ electrical connection of a single nanowire is realized, and technical difficulties in removal of a template and transfer are avoided.

Description

technical field [0001] The invention belongs to the technical field of material chemical industry and relates to a method for in-situ growth of metal oxide, metal nitride and metal carbide nanowires. Background technique [0002] Inorganic material nanowires have been widely studied and applied in the fields of photocatalysis, solar cells, and chemical sensors due to their high specific surface area, high aspect ratio, and size-dependent effects. In related research literature, people usually use various wet chemistries, including catalyst-assisted hydrothermal method or template method, to prepare various metal oxide, carbide, and nitride nanowires. However, the nanowires prepared by these methods need to be templated during use, and are often broken or aggregated together, making it difficult to realize the electrical connection of a single nanowire and prepare corresponding electronic devices. Recently, noble metal (Pd, Ag, Au or their alloys) nanowires were directly pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B30/02C30B29/62C30B33/02
Inventor 李晓干余隽刘丽鹏孙芳洁黄正兴唐祯安王兢闫卫平
Owner DALIAN UNIV OF TECH
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